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Band Structure Effects on the Scaling Properties of [111] InAs Nanowire MOSFETs

Publiceringsår: 2009
Språk: Engelska
Sidor: 201-205
Publikation/Tidskrift/Serie: IEEE Transactions on Electron Devices
Volym: 56
Nummer: 2
Dokumenttyp: Artikel i tidskrift
Förlag: IEEE--Institute of Electrical and Electronics Engineers Inc.


We have investigated the scaling properties of [111] InAs nanowire MOSFETs in the ballistic limit. The nanowire band structure has been calculated with an Sp(3)d(5)s* tight-binding model for nanowire diameters between 2 and 25 nm. Both the effective band gap and the effective masses increase with confinement. Using the atomistic dispersion relations, the ballistic currents and corresponding capacitances have been calculated with a semianalytical model. It is shown that the InAs nanowire MOSFET with diameters scaled below 15-20 nm can be expected to operate close to the quantum capacitance limit, assuming a high-kappa dielectric thickness of 1-1.5 nm. We have also investigated the evolution of f (t) and the gate delay, both showing improvements as the device is scaled. The very small intrinsic gate capacitance in the quantum limit makes the device susceptible to parasitic capacitances.


  • Condensed Matter Physics
  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Band structure
  • field-effect transistor (FET)
  • InAs
  • nanowire


  • Nano-lup-obsolete
  • ISSN: 0018-9383

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