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High Current Density InAsSb/GaSb Tunnel Field Effect Transistors

Publiceringsår: 2012
Språk: Engelska
Sidor: 205-206
Publikation/Tidskrift/Serie: Device research conference
Dokumenttyp: Konferensbidrag
Förlag: IEEE--Institute of Electrical and Electronics Engineers Inc.


Steep-slope devices, such as tunnel field-effect transistors (TFETs), have recently gained interest

due to their potential for low power operation at room temperature. The devices are based on inter-band

tunneling which could limit the on-current since the charge carriers must tunnel through a barrier to traverse

the device. The InAs/GaSb heterostructure forms a broken type II band alignment which enables inter-band

tunneling without a barrier, allowing high on-currents. We have recently demonstrated high current density

(Ion,reverse = 17.5 mA/µm) nanowire Esaki diodes and in this work we investigate the potential of InAs/GaSb

heterostructure nanowires to operate as TFETs. We present device characterization of InAs 0.85 Sb 0.15 /GaSb

nanowire TFETs, which exhibit record-high on-current levels.


  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Tunneling Field-Effect Transistors
  • Broken gap
  • InAs
  • GaSb


70th Annual Device Research Conference (DRC)
  • ISSN: 1548-3770

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