A Class-AB 1.65GHz-2GHz Broadband CMOS Medium Power Amplifier
Författare
Summary, in English
In this paper a single stage broadband CMOS RF power
amplifier is presented. The power amplifier is fabricated in
a 0:25¹m CMOS process. Measurements with a 2:5V supply
voltage show an output power of 18:5 dBm with an associated
PAE of 16% at the 1-dB compression point. The measured
gain is 5.1 § 0:5 dB from 1.65 to 2 GHz. Simulated
and measured results agree reasonably well.
amplifier is presented. The power amplifier is fabricated in
a 0:25¹m CMOS process. Measurements with a 2:5V supply
voltage show an output power of 18:5 dBm with an associated
PAE of 16% at the 1-dB compression point. The measured
gain is 5.1 § 0:5 dB from 1.65 to 2 GHz. Simulated
and measured results agree reasonably well.
Publiceringsår
2005
Språk
Engelska
Publikation/Tidskrift/Serie
Proceedings of Norchip 2005
Länkar
Dokumenttyp
Konferensbidrag
Ämne
- Electrical Engineering, Electronic Engineering, Information Engineering
Conference name
NORCHIP Conference, 2005
Conference date
2005-11-21 - 2005-11-22
Conference place
Oulu, Finland
Status
Published