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Optimization of Au-assisted InAs nanowires grown by MOVPE

Publiceringsår: 2006
Språk: Engelska
Sidor: 326-333
Publikation/Tidskrift/Serie: Journal of Crystal Growth
Volym: 297
Nummer: 2
Dokumenttyp: Artikel i tidskrift
Förlag: Elsevier


Epitaxially-grown InAs nanowires may have great potential for nanowire device applications, due to the high electron mobility and narrow direct band gap of this material. Various applications will most likely require different selected growth conditions, due to such factors as temperature-sensitive substrates or pressure-dependent intrinsic doping. However, it has been reported that InAs nanowires are more sensitive to growth conditions than nanowires of other similar III-V materials. Here we discuss the effect of growth conditions on the morphology and growth rate of InAs nanowires, with the aim of determining the optimum growth achievable under various conditions. Growth temperature, relative and absolute precursor flows, seed particle size and density, and substrate type are discussed. (c) 2006 Elsevier B.V. All rights reserved.


  • Condensed Matter Physics
  • semiconducting III-V
  • nanostructures
  • metalorganic vapor phase epitaxy
  • material


  • ISSN: 0022-0248

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