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Reduced impact of induced gate noise on inductively degenerated LNAs in deep submicron CMOS technologies

Publiceringsår: 2005
Språk: Engelska
Sidor: 31-36
Publikation/Tidskrift/Serie: Analog Integrated Circuits and Signal Processing
Volym: 42
Nummer: 1
Dokumenttyp: Artikel i tidskrift
Förlag: Springer


Designers of radio-frequency inductively-degenerated CMOS low-noise-amplifiers have usually not followed the guidelines for achieving minimum noise figure. Nonetheless, state-of-the- art implementations display noise figure values very close to the theoretical minimum. In this paper, we point out that this is due to the effect of the parasitic overlap capacitances in the MOS device. In particular, we show that overlap capacitances lead to a significant induced-gate-noise reduction, especially when deep sub-micron CMOS processes are used.


  • Electrical Engineering, Electronic Engineering, Information Engineering


  • ISSN: 0925-1030

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