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Development of a Vertical Wrap-Gated InAs FET

  • Claes Thelander
  • Carl Rehnstedt
  • Linus E. Froberg
  • Erik Lind
  • Thomas Martensson
  • Philippe Caroff
  • Truls Lowgren
  • B. Jonas Ohlsson
  • Lars Samuelson
  • Lars-Erik Wernersson
Publiceringsår: 2008
Språk: Engelska
Sidor: 3030-3036
Publikation/Tidskrift/Serie: IEEE Transactions on Electron Devices
Volym: 55
Nummer: 11
Dokumenttyp: Artikel i tidskrift
Förlag: IEEE--Institute of Electrical and Electronics Engineers Inc.


In this paper, we report on the development of a vertical wrap-gated field-effect transistor based on epitaxially grown InAs nanowires. We discuss some of the important steps involved in the growth and processing, such as nanowire position control in situ doping, high-kappa dielectric deposition, spacer layer formation: and metal wrap-gate fabrication. In particular, we compare a few alternative methods for deposition of materials onto vertical structures and discuss their potential advantages and limitations. Finally, we also present a comparison of transistor performance for nanowires grown using two different epitaxial techniques.


  • Condensed Matter Physics
  • Electrical Engineering, Electronic Engineering, Information Engineering
  • nanowire
  • Field-effect transistor (FET)
  • InAs
  • wrap gate
  • surround gate


  • Nano-lup-obsolete
  • ISSN: 0018-9383

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