Javascript verkar inte påslaget? - Vissa delar av Lunds universitets webbplats fungerar inte optimalt utan javascript, kontrollera din webbläsares inställningar.
Du är här

Semiconductor nanowires for 0D and 1D physics and applications

Publiceringsår: 2004
Språk: Engelska
Sidor: 313-318
Publikation/Tidskrift/Serie: Physica E: Low-Dimensional Systems and Nanostructures
Volym: 25
Nummer: 2-3
Dokumenttyp: Artikel i tidskrift
Förlag: Elsevier


During the last 5 years the potential for applications of semiconductor nanowires has grown rapidly via the development of methods for catalytically induced nanowire growth using the, so-called vapor-liquid-solid (VLS) growth mode. The VLS method offers a high degree of control of parameters such as position, diameter, length and composition, including the realization of atomically abrupt heterostructure interfaces inside a nanowire. In this review, we summarize the progress and the standing of our research from the point of view of controlled growth, structural and electronic properties and in terms of different families of devices which have been possible to realize. (C) 2004 Elsevier B.V. All rights reserved.


  • Chemical Sciences
  • Condensed Matter Physics
  • Nanowires
  • Quantum confinement
  • Single-electron tunneling 68.65.−k
  • 78.67.Lt
  • 73.63.−b
  • 73.23.Hk
  • Heterostructures


  • ISSN: 1386-9477

Box 117, 221 00 LUND
Telefon 046-222 00 00 (växel)
Telefax 046-222 47 20
lu [at] lu [dot] se

Fakturaadress: Box 188, 221 00 LUND
Organisationsnummer: 202100-3211
Om webbplatsen