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Defect-free InP nanowires grown in [001] direction on InP(001)

Publiceringsår: 2004
Språk: Engelska
Sidor: 2077-2079
Publikation/Tidskrift/Serie: Applied Physics Letters
Volym: 85
Nummer: 11
Dokumenttyp: Artikel i tidskrift
Förlag: American Institute of Physics


We report on [001] InP nanowires grown by metalorganic vapor phase epitaxy directly on (001) InP substrates. Characterization by scanning electron microscopy and transmission electron microscopy reveals wires with nearly square cross sections and a perfect zinc-blende crystalline structure that is free of stacking faults. Photoluminescence measurements of single [001] nanowires exhibit a narrow and intense emission peak at approximately 1.4 eV, whereas <111>B grown reference wires show additional broad luminescence peaks at lower energy. The origin of this uncommon wire growth direction [001] is discussed as a means of controlled formation of [00l]-oriented nanowires on (001) substrates. (C) 2004 American Institute of Physics.


  • Chemical Sciences
  • Condensed Matter Physics


  • ISSN: 0003-6951

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