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Epitaxially grown GaP/GaAs1-xPx/GaP double heterostructure nanowires for optical applications

Publiceringsår: 2005
Språk: Engelska
Sidor: 936-939
Publikation/Tidskrift/Serie: Nanotechnology
Volym: 16
Nummer: 6
Dokumenttyp: Artikel i tidskrift
Förlag: IOP Publishing


We demonstrate metal organic vapour phase epitaxy growth of GaP/GaAs1-xPx/GaP double heterostructure nanowires on GaP(111)B, and report bright photoluminescence at room temperature. By using different PH3 to AsH3 flow ratios during growth of the GaAs1-xPx segment, we are able to control the composition of the segment, making it feasible to tune the wavelength of the emitted light. A photoluminescence system was employed to characterize the luminescence, and x-ray energy dispersive spectrometry and x-ray diffraction studies were used to investigate the composition of the segment. These double heterostructure nanowires could in the future be used in optoelectronic devices and as multi pie-wavelength fluorescent markers for biomedical applications.


  • Nano Technology


  • ISSN: 0957-4484

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