Epitaxially grown GaP/GaAs1-xPx/GaP double heterostructure nanowires for optical applications

Summary, in English

We demonstrate metal organic vapour phase epitaxy growth of GaP/GaAs1-xPx/GaP double heterostructure nanowires on GaP(111)B, and report bright photoluminescence at room temperature. By using different PH3 to AsH3 flow ratios during growth of the GaAs1-xPx segment, we are able to control the composition of the segment, making it feasible to tune the wavelength of the emitted light. A photoluminescence system was employed to characterize the luminescence, and x-ray energy dispersive spectrometry and x-ray diffraction studies were used to investigate the composition of the segment. These double heterostructure nanowires could in the future be used in optoelectronic devices and as multi pie-wavelength fluorescent markers for biomedical applications.

• Författare: CPT Svensson; Werner Seifert; Magnus Larsson; Reine Wallenberg; J Stangl; G Bauer; Lars Samuelson
• Avdelning/ar: Fasta tillståndets fysik; Centrum för analys och syntes
• Publiceringsår: 2005
• Språk: Engelska
• Sidor: 936-939
• Publikation/Tidskrift/Serie: Nanotechnology
• Volym: 16
• Issue: 6
• Länkar: http://dx.doi.org/10.1088/0957-4484/16/6/052
• Dokumenttyp: Artikel i tidskrift
• Förlag: IOP Publishing
• Ämne: Nano Technology
• Status: Published
• ISBN/ISSN/Övrigt: ISSN: 0957-4484