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Characterization of GaSb nanowires grown by MOVPE

Publiceringsår: 2008
Språk: Engelska
Sidor: 5119-5122
Publikation/Tidskrift/Serie: Journal of Chrystal Growth
Volym: 310
Nummer: 23
Dokumenttyp: Konferensbidrag
Förlag: Elsevier


We report the growth and characterization of GaSb nanowires grown by MOVPE. The structural properties of the nanowires are investigated by the means of transmission electron microscopy, X-ray diffraction and single nanowire photoluminescence. The measurements confirm a high material quality in the GaSb nanowires. Also, a back-gated nanowire transistor structure is used to extract values for the polarity and resistivity of the GaSb. Finally, a simple kinetic model is presented to explain the non-linear time dependence of the GaSb nanowire growth. (C) 2008 Elsevier B.V. All rights reserved.


  • Condensed Matter Physics
  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Gallium
  • Metalorganic vapor phase epitaxy
  • compounds
  • Antimonides
  • Nanowires


14th International Conference on Metal Organic Vapor Phase Epitaxy
  • Nano-lup-obsolete
  • ISSN: 0022-0248

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