Characterization of GaSb nanowires grown by MOVPE
Publikation/Tidskrift/Serie: Journal of Chrystal Growth
We report the growth and characterization of GaSb nanowires grown by MOVPE. The structural properties of the nanowires are investigated by the means of transmission electron microscopy, X-ray diffraction and single nanowire photoluminescence. The measurements confirm a high material quality in the GaSb nanowires. Also, a back-gated nanowire transistor structure is used to extract values for the polarity and resistivity of the GaSb. Finally, a simple kinetic model is presented to explain the non-linear time dependence of the GaSb nanowire growth. (C) 2008 Elsevier B.V. All rights reserved.
- Condensed Matter Physics
- Electrical Engineering, Electronic Engineering, Information Engineering
- Metalorganic vapor phase epitaxy
14th International Conference on Metal Organic Vapor Phase Epitaxy
- ISSN: 0022-0248