Characterization of GaSb nanowires grown by MOVPE

Summary, in English

We report the growth and characterization of GaSb nanowires grown by MOVPE. The structural properties of the nanowires are investigated by the means of transmission electron microscopy, X-ray diffraction and single nanowire photoluminescence. The measurements confirm a high material quality in the GaSb nanowires. Also, a back-gated nanowire transistor structure is used to extract values for the polarity and resistivity of the GaSb. Finally, a simple kinetic model is presented to explain the non-linear time dependence of the GaSb nanowire growth. (C) 2008 Elsevier B.V. All rights reserved.

• Författare: Mattias Borg; Kimberly Dick Thelander; Henrik Nilsson; Niklas Sköld; Jakob Wagner; Philippe Caroff; Lars-Erik Wernersson
• Avdelning/ar: Fasta tillståndets fysik; Centrum för analys och syntes; Institutionen för elektro- och informationsteknik
• Publiceringsår: 2008
• Språk: Engelska
• Sidor: 5119-5122
• Publikation/Tidskrift/Serie: Journal of Chrystal Growth
• Volym: 310
• Issue: 23
• Länkar: http://dx.doi.org/10.1016/j.jcrysgro.2008.07.061
• Dokumenttyp: Konferensbidrag
• Förlag: Elsevier
• Ämne: Condensed Matter Physics; Electrical Engineering, Electronic Engineering, Information Engineering
• Nyckelord: Gallium; Metalorganic vapor phase epitaxy; compounds; Antimonides; Nanowires
• Conference name: 14th International Conference on Metal Organic Vapor Phase Epitaxy
• Conference date: 2008-06-01 - 2008-06-06
• Status: Published
• Forskningsgrupp: Nano
• ISBN/ISSN/Övrigt: ISSN: 0022-0248