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Single-electron transistors in heterostructure nanowires.

Publiceringsår: 2003
Språk: Engelska
Sidor: 2052-2054
Publikation/Tidskrift/Serie: Applied Physics Letters
Volym: 83
Nummer: 10
Dokumenttyp: Artikel i tidskrift
Förlag: American Institute of Physics


Semiconductor-based single-electron transistors have been fabricated using heterostructure nanowire growth, by introducing a double barrier of InP into InAs nanowires. From electrical measurements, we observe a charging energy of 4 meV for the approximately 55 nm diameter and 100 nm long InAs islands between the InP barriers. The Coulomb blockade can be periodically lifted as a function of gate voltage for all devices, which is a typical signature of single-island transistors. Homogeneous InAs nanowires show no such effect for the corresponding voltage ranges. ©2003 American Institute of Physics.


  • Chemical Sciences


  • Neuronano Research Center (NRC)
  • ISSN: 0003-6951

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