Heterointerfaces in III-V semiconductor nanowhiskers

Summary, in English

We have investigated heterostructures formed within Vapor-Liquid-Solid grown III-V nanowhiskers. The growth conditions that are typical for chemical beam epitaxy facilitate the creation of atomically abrupt interfaces. In this paper we investigate the properties of heterostructure interfaces including switching of either the column-V material (As, P) or the column-III material (In, Ga).

• Författare: Ann Persson; Jonas Ohlsson; Mikael Björk; Claes Thelander; Martin Magnusson; Knut Deppert; T. Sass; Reine Wallenberg; Lars Samuelson
• Avdelning/ar: Fasta tillståndets fysik; Centrum för analys och syntes
• Publiceringsår: 2002
• Språk: Engelska
• Sidor: 281-283
• Publikation/Tidskrift/Serie: Conference Proceedings - International Conference on Indium Phosphide and Related Materials
• Länkar: http://dx.doi.org/10.1109/ICIPRM.2002.1014367
• Dokumenttyp: Konferensbidrag
• Förlag: IEEE - Institute of Electrical and Electronics Engineers Inc.
• Ämne: Condensed Matter Physics
• Nyckelord: Semiconductor nanowhiskers
• Conference name: 14th Indium Phosphide and Related Materials Conference
• Conference date: 2002-05-12 - 2002-05-16
• Conference place: Stockholm, Sweden
• Status: Published
• ISBN/ISSN/Övrigt: ISSN: 1092-8669; CODEN: CPRMEG