One-dimensional heterostructures in semiconductor nanowhiskers
Författare
Summary, in English
We report on the growth of designed heterostructures placed within semiconductor nanowhiskers, exemplified by the InAs/InP material system. Based on transmission electron microscopy, we deduce the interfaces between InAs and InP to be atomically sharp. Electrical measurements of thermionic emission across an 80-nm-wide InP heterobarrier, positioned inside InAs whiskers 40 nm in diameter, yield a barrier height of 0.6 eV. On the basis of these results, we propose new branches of physics phenomena as well as new families of device structures that will now be possible to realize and explore.
Publiceringsår
2002
Språk
Engelska
Sidor
1058-1060
Publikation/Tidskrift/Serie
Applied Physics Letters
Volym
80
Issue
6
Dokumenttyp
Artikel i tidskrift
Förlag
American Institute of Physics (AIP)
Ämne
- Condensed Matter Physics
- Chemical Sciences
Status
Published
ISBN/ISSN/Övrigt
- ISSN: 0003-6951