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One-dimensional heterostructures in semiconductor nanowhiskers

Publiceringsår: 2002
Språk: Engelska
Sidor: 1058-1060
Publikation/Tidskrift/Serie: Applied Physics Letters
Volym: 80
Nummer: 6
Dokumenttyp: Artikel i tidskrift
Förlag: American Institute of Physics


We report on the growth of designed heterostructures placed within semiconductor nanowhiskers, exemplified by the InAs/InP material system. Based on transmission electron microscopy, we deduce the interfaces between InAs and InP to be atomically sharp. Electrical measurements of thermionic emission across an 80-nm-wide InP heterobarrier, positioned inside InAs whiskers 40 nm in diameter, yield a barrier height of 0.6 eV. On the basis of these results, we propose new branches of physics phenomena as well as new families of device structures that will now be possible to realize and explore.


  • Condensed Matter Physics
  • Chemical Sciences


  • ISSN: 0003-6951

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