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InP hot electron transistors with a buried metal gate

Publiceringsår: 2003
Språk: Engelska
Sidor: 7221-7226
Publikation/Tidskrift/Serie: Japanese Journal of Applied Physics
Volym: 42
Nummer: 12
Dokumenttyp: Artikel i tidskrift
Förlag: Japan Society of Applied Physics


To apply the ballistic nature of hot electrons, an InP hot electron transistor with a buried metal (BM-HET) is reported. In this device, carriers are extracted from the emitter by an attractive potential originating from an embedded metal grating, and they propagate through intrinsic semiconductor material only. A simple estimation shows a high cutoff frequency and low output conductance. The estimated highest cutoff frequency is approximately 1 THz. Fabricated devices show that the collector current increased with the gate bias. After extraction of the leakage cur-rent, a clear saturation of the collector current in common-emitter characteristics was confirmed and the possibility of BM-HET as a candidate for high-speed electron devices was demonstrated.


  • Condensed Matter Physics
  • Electrical Engineering, Electronic Engineering, Information Engineering
  • hot electron transistors
  • buried metal gate
  • ballistic electron
  • InP


  • ISSN: 0021-4922

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