Webbläsaren som du använder stöds inte av denna webbplats. Alla versioner av Internet Explorer stöds inte längre, av oss eller Microsoft (läs mer här: * https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Var god och använd en modern webbläsare för att ta del av denna webbplats, som t.ex. nyaste versioner av Edge, Chrome, Firefox eller Safari osv.

Heterostructures incorporated in one-dimensional semiconductor materials and devices

In English

Författare

Summary, in English

As an alternative to traditional top-down techniques for fabrication of one-dimensional devices we here report an approach wherein a bottom-up technique is used to create one-dimensional device structures. We use the vapor-liquid-solid growth method, in which a catalytically active gold nanoparticle forms a eutectic alloy with the nanowire constituents. Our method of growth allows atomically abrupt interfaces between different III-V semiconductors, also for highly mismatched combinations for which conventional growth techniques can not be used. Special emphasis is put on the processing of ohmic contacts to nanowires. We describe the transport properties of nanowires containing heterostructures from which band off-sets between two different binary materials are determined. Finally, we report the creation of double-barrier resonant tunneling diodes in which a single InAs quantum dot surrounded by InP tunnel barriers acts as the active element in the device, resulting in energetically sharp resonant tunneling peaks reflecting tunneling into zero-dimensional states of the quantum dot.

Publiceringsår

2003

Språk

Engelska

Sidor

253-260

Publikation/Tidskrift/Serie

Physics and Semiconductors 2002 : Proceedings of the 26th International Conference on the Physics of Semiconductors

Volym

171

Dokumenttyp

Del av eller Kapitel i bok

Förlag

Inst of Physics Pub Inc

Ämne

  • Condensed Matter Physics
  • Chemical Sciences

Status

Published

ISBN/ISSN/Övrigt

  • ISBN: 0750309245