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Electron mean free path for GaAs(100)-c(4x4) at very low energies

In English

Författare

  • P Jiricek
  • M Cukr
  • I Bartos
  • Janusz Sadowski

Summary, in English

Electron mean free path (MFP) was determined by the angular resolved photoemission in 10-40 eV energy range for GaAs(100)-c(4 x 4) by the overlayer method. The investigation was based on the attenuation of the normal photoemission intensity of the Al 2p line from the molecular-beam-epitaxy grown GaAlAs layer buried four monolayers of GaAs below the surface. The energy dependence of the MFP shows a pronounced maximum at about 30 eV which is related to the corresponding section of the electron band structure of GaAs(100). (C) 2004 Elsevier B.V. All rights reserved.

Publiceringsår

2004

Språk

Engelska

Sidor

1196-1199

Publikation/Tidskrift/Serie

Proceedings of the 22nd European Conference on Surface Science (Surface Science)

Volym

566

Dokumenttyp

Konferensbidrag

Förlag

Elsevier

Ämne

  • Physical Sciences
  • Natural Sciences

Nyckelord

  • electron solid interactions
  • spectroscopy
  • synchrotron radiation photoelectron
  • molecular beam epitaxy
  • gallium arsenide

Conference name

22nd European Conference on Surface Science

Conference date

2003-09-07 - 2003-09-12

Conference place

Prague, Czech Republic

Status

Published

ISBN/ISSN/Övrigt

  • ISSN: 0039-6028