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Electrical properties of InAs-based nanowires

In English

Författare

Summary, in English

Semiconductor nanowires are grown using chemical beam epitaxy and metal organic vapor phase epitaxy from size-selected gold nanoparticles acting as catalysts. By changing materials during the growth it is possible to form heterostructures both along the length of the nanowires but also in a core-shell fashion. In particular, incorporation of pairs of InP tunnel barriers in InAs nanowires has been used to fabricate single-electron transistors and resonant tunneling diodes

Publiceringsår

2004

Språk

Engelska

Sidor

449-452

Publikation/Tidskrift/Serie

AIP Conference Proceedings

Volym

723

Dokumenttyp

Konferensbidrag

Förlag

American Institute of Physics (AIP)

Ämne

  • Condensed Matter Physics

Nyckelord

  • InAs-InP
  • Au
  • resonant tunneling diodes
  • catalysts
  • heterostructures
  • semiconductor nanowires
  • electrical properties
  • chemical beam epitaxy
  • gold nanoparticles
  • metal organic vapor phase epitaxy
  • single electron transistors
  • InP tunnel barriers

Conference name

Electronic Properties of Synthetic Nanostructures. XVIII International Winterschool/Euroconference on Electronic Properties of Novel Materials

Conference date

2004-03-06 - 2004-03-13

Conference place

Tirol, Austria

Status

Published

ISBN/ISSN/Övrigt

  • ISSN: 1551-7616
  • ISSN: 0094-243X
  • CODEN: APCPCS