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In-Plane Magnetic Anisotropy and Temperature Dependence of Switching Field in (Ga, Mn)As Ferromagnetic Semiconductors

Publiceringsår: 2012
Språk: Engelska
Sidor: 4868-4873
Publikation/Tidskrift/Serie: Journal of Nanoscience and Nanotechnology
Volym: 12
Nummer: 6
Dokumenttyp: Artikel i tidskrift
Förlag: American Scientific Publishers


We explore the magnetic anisotropy of GaMnAs ferromagnetic semiconductor by Planar Hall Effect (PHE) measurements. Using low magnitude of applied magnetic field (i.e., when the magnitude H

is smaller than both cubic Hc and uniaxial Hu anisotropy field), we have observed various shapes of applied magnetic field direction dependence of Planar Hall Resistance (PHR). In particular, in two

regions of temperature. At T TC/2 the “zigzag-shape” signal of PHR. They reflect different magnetic anisotropy and provide information about magnetization

reversal process in GaMnAs ferromagnetic semiconductor. The theoretical model calculation of PHR based on the free energy density reproduces well the experimental data. We report also the temperature dependence of anisotropy constants and magnetization orientations. The transition of easy axis from biaxial to uniaxiale axes has been observed and confirmed by SQUID measurements.


  • Nano Technology
  • ferromagnetic semiconductors
  • spintronics
  • Planar Hall effect


  • ISSN: 1533-4880

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