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Thin InAs membranes and GaSb buffer layers on GaAs(001) substrates

Publiceringsår: 2012
Språk: Engelska
Publikation/Tidskrift/Serie: Journal of Vacuum Science and Technology B
Volym: 30
Nummer: 5
Dokumenttyp: Artikel i tidskrift
Förlag: American Institute of Physics


Thin InAs layers and membranes are fabricated on GaAs substrates using GaSb buffer layers grown by MOVPE. The quality of the GaSb buffer layers is optimized and epitaxial InAs layers are grown on GaSb layers of various thickness. The best GaSb buffer layers are obtained for a nucleation temperature of 450 degrees C and a subsequent growth temperature of 570 degrees C with a V/III ratio of 3, as confirmed by both the structural (high-resolution XRD, AFM) and electrical (Hall) measurements. Furthermore, a clear relationship between the structural quality of the GaSb and InAs layers is established. Finally, free-standing InAs structures are fabricated where Hall measurements reveal a mobility that depends on the film thickness.


  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics
  • atomic force microscopy
  • buffer layers
  • Hall effect
  • III-V
  • semiconductors
  • indium compounds
  • nucleation
  • semiconductor
  • epitaxial layers
  • semiconductor growth
  • vapour phase epitaxial growth
  • X-ray diffraction


  • ISSN: 1520-8567

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