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InAs film grown on Si(111) by Metalorganic Vapor Phase Epitaxy

In English

Författare

Summary, in English

We report the successful growth of high quality InAs films directly on Si( 111) by Metal Organic Vapor Phase Epitaxy. A nearly mirror-like and uniform InAs film is obtained at 580 C for a thickness of 2 mu m. We measured a high value of the electron mobility of 5100 cm(2)/Vs at room temperature. The growth is performed using a standard two-step procedure. The influence of the nucleation layer, group V flow rate, and layer thickness on the electrical and morphological properties of the InAs film have been investigated. We present results of our studies by Atomic Force Microscopy, Scanning Electron Microscopy, electrical Hall/van der Pauw and structural X-Ray Diffraction characterization.

Publiceringsår

2008

Språk

Engelska

Sidor

042017-042017

Publikation/Tidskrift/Serie

Journal of Physics: Conference Series

Volym

100

Dokumenttyp

Konferensbidrag

Förlag

IOP Publishing

Ämne

  • Condensed Matter Physics
  • Electrical Engineering, Electronic Engineering, Information Engineering

Conference name

17th International Vacuum Congress/13th International Conference on Surface Science/Internatinal Conference on Nanoscience and Technology

Conference date

2007-07-02 - 2007-07-06

Conference place

Stockholm, Sweden

Status

Published

Forskningsgrupp

  • Nano

ISBN/ISSN/Övrigt

  • ISSN: 1742-6588
  • ISSN: 1742-6596