High Transconductance Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
Publikation/Tidskrift/Serie: 2011 IEEE International Electron Devices Meeting (IEDM)
Förlag: IEEE--Institute of Electrical and Electronics Engineers Inc.
In this paper we present a 55 nm gate length In0.53Ga0.47As MOSFET with extrinsic transconductance of 1.9 mS/mu m and on-resistance of 199 Omega mu m. T he self-aligned MOSFET is formed using metalorganic chemical vapor deposition regrowth of highly doped source and drain access regions. The fabricated 140 nm gate length devices shows a low subthreshold swing of 79 mV/decade, which is attributed to the described low temperature gate-last process scheme.
- Condensed Matter Physics
- Electrical Engineering, Electronic Engineering, Information Engineering
IEEE International Electron Devices Meeting (IEDM)