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A resonant galvanically separated power MOSFET/IGBT gate driver

Publiceringsår: 2004
Språk: Engelska
Sidor: 3243-3247
Publikation/Tidskrift/Serie: 2004 IEEE 35th Annual Power Electronics Specialists Conference
Dokumenttyp: Konferensbidrag
Förlag: IEEE--Institute of Electrical and Electronics Engineers Inc.


This paper provides a complete circuit for a low-loss non-conventional power MOSFET or IGBT driver. The driver, which provides galvanically separated input and output signals, is fed from a unipolar DC voltage but provides a bipolar gate-source voltage. The driver applies two, already known, techniques and together they form a resonant galvanically separated power MOSFET/IGBT gate driver. The first technique provides the galvanic separation, voltage level increase (or decrease) for the energy supply and signal transfer to the second technique. The second technique is the driver circuit, which is a resonant circuit that provides good driver properties. Together they form an inexpensive and non-complicated circuit, compared to conventional MOSFET or IGBT drivers. The use of expensive DC-DC converters is avoided and still bipolar gate voltages are provided


  • Other Electrical Engineering, Electronic Engineering, Information Engineering
  • galvanic separation
  • bipolar gate-source voltage
  • unipolar DC voltage
  • IGBT driver
  • resonant galvanically driver
  • power MOSFET gate driver
  • resonant circuit
  • signal transfer
  • DC-DC converter


2004 IEEE 35th Annual Power Electronics Specialists Conference
  • ISBN: 0-7803-8399-0

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