Improved breakdown voltages for type I InP/InGaAs DHBTs
Författare
Summary, in English
Publiceringsår
2008
Språk
Engelska
Sidor
504-507
Publikation/Tidskrift/Serie
20th International Conference on Indium Phosphide and Related Materials, 2008. IPRM 2008
Dokumenttyp
Konferensbidrag
Förlag
IEEE - Institute of Electrical and Electronics Engineers Inc.
Ämne
- Condensed Matter Physics
- Electrical Engineering, Electronic Engineering, Information Engineering
Nyckelord
- InP heterojunction bipolar transistor
Conference name
20th International Conference on Indium Phosphide and Related Materials
Conference date
2008-05-25 - 2008-05-29
Conference place
Versailles, France
Status
Published
Forskningsgrupp
- Nano
ISBN/ISSN/Övrigt
- ISSN: 1092-8669