Improved breakdown voltages for type I InP/InGaAs DHBTs
Publikation/Tidskrift/Serie: 20th International Conference on Indium Phosphide and Related Materials, 2008. IPRM 2008
Förlag: IEEE--Institute of Electrical and Electronics Engineers Inc.
We have investigated the base-collector breakdown voltage of type I InGaAs/InP DHBTs, which is shown to be dominated by band-to-band tunneling in the base-collector grade. By optimizing the grade we obtain a 20% increase in the breakdown voltage compared with traditional grades.
- Condensed Matter Physics
- Electrical Engineering, Electronic Engineering, Information Engineering
- InP heterojunction bipolar transistor
20th International Conference on Indium Phosphide and Related Materials
- ISSN: 1092-8669