Deposition of HfO2 on InAs by atomic-layer deposition
Författare
Summary, in English
Avdelning/ar
Publiceringsår
2009
Språk
Engelska
Sidor
1561-1563
Publikation/Tidskrift/Serie
Microelectronic Engineering
Volym
86
Issue
7-9
Dokumenttyp
Konferensbidrag
Förlag
Elsevier
Ämne
- Electrical Engineering, Electronic Engineering, Information Engineering
Nyckelord
- Atomic-layer deposition
- III-V Metal-oxide-semiconductor
- Hafnium dioxide
- Indium arsenide
Conference name
16th Biennial Conference on Insulating Films on Semiconductors
Conference date
2009-06-28 - 2009-07-07
Status
Published
Forskningsgrupp
- Nano
ISBN/ISSN/Övrigt
- ISSN: 0167-9317
- ISSN: 1873-5568