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Resonant photoemission at the Ga 3p photothreshold in InxGa1-xN

Publiceringsår: 2006
Språk: Engelska
Sidor: 25-28
Publikation/Tidskrift/Serie: Journal of Electron Spectroscopy and Related Phenomena
Volym: 152
Nummer: 1-2
Dokumenttyp: Artikel i tidskrift
Förlag: Elsevier


Resonance effects at the Ga 3p photoabsorption threshold have been observed in photoemission spectra recorded from thin film InxGa1-xN alloys. The spectra display satellites of the main Ga 3d emission line, and the intensity of these satellites resonate at this threshold. The satellites are associated with a 3d(8) state, and have previously been observed for the semiconductors GaN, GaAs, and GaP. The resonance behavior has been studied for a variety of InxGa1-x thin films with differing In concentration and band gap. The photon energy where the maximum resonance is observed varies with band gap within the alloy system, but does not follow the trend observed for binary Ga semiconducting compounds. We also observe that the threshold resonant energy increases slightly as the In content increases. (c) 2006 Elsevier B.V. All rights reserved.


  • Natural Sciences
  • Physical Sciences
  • surfaces
  • photoemission
  • semiconductors
  • electronic structure


  • ISSN: 0368-2048

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