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Resonant photoemission at the Ga 3p photothreshold in InxGa1-xN

In English

Författare

Summary, in English

Resonance effects at the Ga 3p photoabsorption threshold have been observed in photoemission spectra recorded from thin film InxGa1-xN alloys. The spectra display satellites of the main Ga 3d emission line, and the intensity of these satellites resonate at this threshold. The satellites are associated with a 3d(8) state, and have previously been observed for the semiconductors GaN, GaAs, and GaP. The resonance behavior has been studied for a variety of InxGa1-x thin films with differing In concentration and band gap. The photon energy where the maximum resonance is observed varies with band gap within the alloy system, but does not follow the trend observed for binary Ga semiconducting compounds. We also observe that the threshold resonant energy increases slightly as the In content increases. (c) 2006 Elsevier B.V. All rights reserved.

Publiceringsår

2006

Språk

Engelska

Sidor

25-28

Publikation/Tidskrift/Serie

Journal of Electron Spectroscopy and Related Phenomena

Volym

152

Issue

1-2

Dokumenttyp

Artikel i tidskrift

Förlag

Elsevier

Ämne

  • Natural Sciences
  • Physical Sciences

Nyckelord

  • surfaces
  • photoemission
  • semiconductors
  • electronic structure

Status

Published

ISBN/ISSN/Övrigt

  • ISSN: 0368-2048