Thermal diffusion of Mn through GaAs overlayers on (Ga, Mn) As
Publikation/Tidskrift/Serie: Journal of Physics: Condensed Matter1990-01-01+01:00
Dokumenttyp: Artikel i tidskrift
Förlag: IOP Publishing
Thermally stimulated diffusion of Mn through thin layers of GaAs has been studied by x-ray photoemission. (Ga, Mn) As samples with 5 at% Mn were capped with 4, 6 and 8 monolayer (ML) GaAs, and Mn diffusing through the GaAs was trapped on the surface by means of amorphous As. It was found that the out-diffusion is completely suppressed for an 8 ML thick GaAs film. The short diffusion length is attributed to an electrostatic barrier formed at the (Ga, Mn) As/GaAs interface.
- Physical Sciences
- Natural Sciences
- ISSN: 1361-648X