Lars Samuelson
Titel
Professor
046-222 76 79
070-317 76 79
Lars [dot] Samuelson [at] ftf [dot] lth [dot] se
Publikationer (hämtat ur Lunds universitets publikationsdatabas)
författare
- 2013
- InP Nanowire Array Solar Cells Achieving 13.8% Efficiency by Exceeding the Ray Optics Limit.
- MOVPE-grownInAs/AlAs0.16Sb0.84/InAs and InAs/AlAs0.16Sb0.84/GaSb heterostructures
- Nanowire-Based Electrode for Acute In Vivo Neural Recordings in the Brain
- Optical Far-Field Method with Subwavelength Accuracy for the Determination of Nanostructure Dimensions in Large-Area Samples.
- Optical characterization of InAs quantum wells and dots grown radially on wurtzite InP nanowires.
- Photoluminescence study of Zn-doped wurtzite InP core-shell nanowires
- Photoluminescence study of as-grown vertically standing wurtzite InP nanowire ensembles.
- 2012
- A comparative study of nanowire-based infrared p+-i-n+ photodetectors
- A novel platform enabling spatially resolved electro-optical mapping of NW facets
- Applications of III-V and III-N Nano Wires for the Conversion of Light-to-electricity (Solar Cells) and Electricity-to-light (Light Emitting Diodes)
- Atomic Surface Structure and Electronic Properties of Semiconductor Nanowires Studied by Scanning Tunneling Microscopy and Spectroscopy
- Colorful InAs Nanowire Arrays: From Strong to Weak Absorption With Geometrical Tuning
- Colorful InAs Nanowire Arrays: From Strong to Weak Absorption with Geometrical Tuning.
- Continuous gas-phase synthesis of nanowires with tunable properties.
- Electrical and optical properties of InP nanowire ensemble p(+)-i-n(+) photodetectors.
- Electron Trapping in InP Nanowire FETs with Stacking Faults.
- Electron transport in Mn+ implanted GaAs nanowires
- GaInP Nanowire p-i-n Junctions with Electroluminescence at 569 nm near the Direct to Indirect Bandgap Crossover
- Hopping Conduction in Mn Ion-Implanted GaAs Nanowires.
- Lineshape of the thermopower of quantum dots
- Obligatoriskt nanoregister? Nej tack!
- Particle-assisted GaxIn1-xP nanowire growth for designed bandgap structures
- Polytypic InAs Nanowire Studies Using Scanning Tunneling Microscopy
- Radial InAs quantum structures grown on side-facets of InP nanowires
- Realizing Lateral Wrap-Gated Nanowire FETs: Controlling Gate Length with Chemistry Rather than Lithography.
- Realizing lateral wrap-gated nanowire FETs: Controlling gate length with chemistry rather than lithography
- Single GaInP nanowire p-i-n junctions near the direct to indirect bandgap crossover point
- Spatially resolved Hall effect measurement in a single semiconductor nanowire
- Surface Chemistry, Structure, and Electronic Properties from Microns to the Atomic Scale of Axially Doped Semiconductor Nanowires.
- Transparently wrap-gated semiconductor nanowire arrays for studies of gate-controlled photoluminescence
- Tunnel Field-Effect Transistors Based on InP-GaAs Heterostructure Nanowires.
- Vertical oxide nanotubes connected by subsurface microchannels
- 2011
- A New Route toward Semiconductor Nanospintronics: Highly Mn-Doped GaAs Nanowires Realized by Ion-Implantation under Dynamic Annealing Conditions
- A new route towards semiconductor nanospintronics: highly Mn - doped GaAs nanowires realized by ion - implantation under dynamic annealing conditions.
- Axial InP Nanowire Tandem Junction Grown on a Silicon Substrate
- Controlled synthesis of uniform nanowires in the gas phase.
- Cortical single units recorded by a novel nanowire based electrode
- Degenerate p-doping of InP nanowires for large area tunnel diodes
- Diffusion length measurements in axial and radial heterostructured nanowires using cathodoluminescence
- Doping profile of InP nanowires directly imaged by photoemission electron microscopy
- Dual-gate induced InP nanowire diode
- Dynamics of extremely anisotropic etching of InP nanowires by HCl
- Fabrication and characterization of AlP-GaP core-shell nanowires
- Flervetenskaplig ljusforskning
- Flervetenskaplig ljusforskning
- From fundamental material science to the development of an LED-company
- GaAs-based Nanowires Studied by Low-Temperature Cathodoluminescence
- GaSb nanowire single-hole transistor
- Gate-Induced Fermi Level Tuning in InP Nanowires at Efficiency Close to the Thermal Limit.
- Growth of doped InAsyP1-y nanowires with InP shells
- III - V and III - nitride nanowires for light - emitting device applications
- III-V Nanowires and their Potential for Integration with Silicon
- III-V Nanowires for Opto-Electronic and Energy Applications
- III-V and III-N nanowires for realization of efficient LEDs on silicon
- III-V and III-Nitride Nanowires for Light Emitting Device Applications
- III-V and III-nitride Nanowires for Opto-Electronic and Energy Applications
- III-V and III-nitride nanowires for realization of light-emitting devices
- InAs quantum dots and quantum wells grown on stacking-fault controlled InP nanowires with wurtzite crystal structure
- InSb Nanowire Field-Effect Transistors and Quantum-Dot Devices
- NANOWIRES - from Academic Research to Industrial LEDs
- Nanowire based electrodes for in vivo neuronal signal recordings
- Nanowires - from Nanoscience to Industrial Products
- Nanowires With Promise for Photovoltaics
- Novel ways to fabricate solar cells based on semiconductor nanowires Capturing the sun
- Nucleation and initial stages of growth of GaN nanowires for LEDs by selective-area MOVPE
- Phonon Transport and Thermoelectricity in Twinned InAs Nanowires
- Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates
- Probing the Wurtzite Conduction Band Structure Using State Filling in Highly Doped InP Nanowires.
- Recent progress in nanowire-based nano -optical devices
- Recent progress in nanowire-based nano-optical devices
- Recent progress in opto-electronics nanowire devices
- Scanning gate imaging of quantum dots in 1D ultra-thin InAs/InP nanowires
- Self-seeded, position-controlled InAs nanowire growth on Si: A growth parameter study
- Semiconductor Nanowires for Opto-Electronic and Energy Applications
- Semiconductor Nanowires: From Materials Physics to Device Applications
- Semiconductor Nanowires: from Materials Physics to Devices
- Signatures of Wigner localization in epitaxially grown nanowires
- Ten years with III-V nanowires: a transformation from exploatory materials physics to real world applications
- Thermal conductivity of indium arsenide nanowires with wurtzite and zinc blende phases
- Thermal resistance of a nanoscale point contact to an indium arsenide nanowire
- Toward 3D Integration of 1D Conductors: Junctions of InAs Nanowires
- Valence Band Splitting in Wurtzite InP Nanowires Observed by Photoluminescence and Photoluminescence Excitation Spectroscopy
- 2010
- Bias-controlled friction of InAs nanowires on a silicon nitride layer studied by atomic force microscopy
- Branched nanotrees with immobilized acetylcholine esterase for nanobiosensor applications.
- Changes in Contact Angle of Seed Particle Correlated with Increased Zincblende Formation in Doped InP Nanowires.
- Charge pumping in InAs nanowires by surface acoustic waves
- Comparative friction measurements of InAs nanowires on three substrates
- Control of III-V nanowire crystal structure by growth parameter tuning
- Correlation-induced conductance suppression at level degeneracy in a quantum dot.
- Crystal Phase Engineering in Single InAs Nanowires.
- Crystal structure tuning in InAs nanowires: pure WZ, pure ZB and structural superlattices
- Determination of diffusion lengths in nanowires using cathodoluminescence
- Determination of the wurtzite content and orientation distribution of nanowire ensembles
- Determintation of diffusion legnths in nanowires
- Diameter Dependence of the Wurtzite-Zinc Blende Transition in InAs Nanowires
- Electrodes based on nanowires for neuronal signal recording
- Epitaxial nanowires for electronics and photonics applications
- Fifteen-Piconewton Force Detection from Neural Growth Cones Using Nanowire Arrays
- Growth Mechanism of Self-Catalyzed Group III-V Nanowires.
- Growth and segregation of GaAs-AlxIn1-xP core-shell nanowires
- Growth of Nanowires and their Applications in Devices
- High performance single nanowire tunnel diodes
- High-Performance Single Nanowire Tunnel Diodes.
- III-V Nanowires and their potential for Integration with Silicon
- III-V Nanowires-Extending a Narrowing Road
- In Situ Etching for Total Control Over Axial and Radial Nanowire Growth
- Integration, gap formation, and sharpening of III-V heterostructure nanowires by selective etching
- Low-temperature cathodoluminescence studies of GaAs nanowires in the SEM
- Nano-Schottky Contacts Realized by Bottom-up Technique
- Nanofluidics in hollow nanowires.
- Nanowire based electrodes for neuronal signal recording
- Nanowire based electrodes for neuronal signal recording
- Nanowires for concentrator photovoltaics
- Nanowires in biology: from applications to nanotoxicology
- Nanowires with promise for photovoltaics, growth and characterisation
- Nanowires: A thin thread linking basic materials physics to nanodevices
- New Flexible Toolbox for Nanomechanical Measurements with Extreme Precision and at Very High Frequencies.
- Novel materials- and device-physics promoting 1D electronics
- Probind 1-D InAs/InP nanowire quantum dots with scanning gate microscopy
- Probing Confined Phonon Modes by Transport through a Nanowire Double Quantum Dot
- Probing Strain in Bent Semiconductor Nanowires with Raman Spectroscopy.
- Semiconductor Nanowires: From Basic Materials Physics to IT- and Energy-Applications
- Semiconductor Nanowires: From Materials Science to Physics and Device Applications
- Semiconductor Nanowires: a Generic Approach Towards Novel Materials Physics & Devices
- Semiconductor nanowires as a bottom-up approach to realize nanoelectronic and nanophotonic devices
- Semiconductor nanowires for nanoelectronics and nanophotonic
- Semiconductor nanowires: a generic approach towards novel materials physics and devices
- Structure, mechanics and conductivity of semiconductor nanowires using scanning tunneling microscopy
- The electrical and structural properties of n-type InAs nanowires grown from metal-organic precursors.
- Time-resolved photoluminescence investigations on HfO2-capped InP nanowires
- Vertical dual wrapgated-induced field effect diode
- Wurtzite-Zinc blende transition in InAs nanowires
- 2009
- Axonal guidance using free-standing gallium phosphide nanowires
- Catalyst-free nanowires with axial InxGa1-xAs/GaAs heterostructures
- Controlled polytypic and twin-plane superlattices in iii-v nanowires.
- Effects of Supersaturation on the Crystal Structure of Gold Seeded III-V Nanowires
- Friction Measurements of InAs Nanowires on Silicon Nitride by AFM Manipulation
- Gallium phosphide nanowire arrays and their possible application in cellular force investigations
- Giant, level-dependent g factors in InSb nanowire quantum dots.
- Growth of vertical InAs nanowires on heterostructured substrates
- Measuring Temperature Gradients over Nanometer Length Scales.
- Microphotoluminescence studies of tunable wurtzite InAs0.85P0.15 quantum dots embedded in wurtzite InP nanowires
- Nanowire Biocompatibility in the Brain - Looking for a Needle in a 3D Stack.
- Nanowire-induced Wurtzite InAs Thin Film on Zinc-Blende InAs Substrate
- Nerve Cell Interactions with Free-standing Nanowires
- Preferential Interface Nucleation: An Expansion of the VLS Growth Mechanism for Nanowires
- Rectifying and Sorting of Regenerating Axons by Free Standing Nanowire Patterns: A highway for nerve fibers
- Rectifying and Sorting of Regenerating Axons by Free-Standing Nanowire Patterns: A Highway for Nerve Fibers
- Structural Investigations of Core-shell Nanowires Using Grazing Incidence X-ray Diffraction.
- Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures
- Subcellular Force Dynamics of Outgrowing Axons Measured by Free-standing Nanowires
- Subcellular Force Dynamics of Outgrowing Axons Measured by Free-standing Nanowires
- The fabrication of dense and uniform InAs nanowire arrays
- Thermal Conductance of InAs Nanowire Composites
- What can Materials Education at university level learn from Nanoscience Education?
- X-ray measurements of the strain and shape of dielectric/metallic wrap-gated InAs nanowires
- 2008
- A Radio Frequency Single-Electron Transistor Based on an InAs/InP Heterostructure Nanowire.
- AFM-based manipulation of InAs nanowires
- Analysing the capacitance–voltage measurements of vertical wrapped-gated nanowires
- Assembling Ferromagnetic Single-electron Transistors with Atomic Force Microscopy
- Axonal guidance on patterned free-standing nanowire surfaces
- Carrier density saturation in a Ga0.25In0.75As/InP heterostructure
- Confinement properties of a Ga0.25In0.75As/InP quantum point contact
- Control of GaP and GaAs Nanowire Morphology through Particle and Substrate Chemical Modification.
- Determining a temperature differential across a quantum dot
- Direct Atomic Scale Imaging of III-V Nanowire Surfaces.
- Drive current and threshold voltage control in vertical InAs wrap-gate transistors
- Effects of growth conditions on the crystal structure of gold-seeded GaP nanowires
- Electrical properties of self-assembled branched InAs nanowire junctions
- Engineering nanoscience - a curriculum to satisfy future needs of industry
- Enhanced Zeeman splitting in Ga0.25In0.75As quantum point contacts
- Epitaxial Integration of Nanowires in Microsystems by Local Micrometer-Scale Vapor-Phase Epitaxy
- GaAs/GaSb nanowire heterostructures grown by MOVPE
- Heterostructure Barriers in Wrap Gated Nanowire FETs
- High-Quality InAs/InSb Nanowire Heterostructures Grown by Metal-Organic Vapor-Phase Epitaxy.
- Imaging a one-electron InAs quantum dot in an InAs/InP nanowire
- InAs nanowire metal-oxide-semiconductor capacitors
- Interactions between gallium phosphide nanowires and neurons: towards implantable nanoelectrodes
- Magnetoresistance studies on Co/AlOX/Au and Co/AlOX/Ni/Au tunnel structures
- Monolithic GaAs/InGaP nanowire light emitting diodes on silicon
- Optical properties of rotationally twinned InP nanowire heterostructures
- PHYS 287-Self-assembling semiconductor nanowires for applications in electronics and photonics
- Precursor evaluation for in situ InP nanowire doping
- Selective etching of III-V nanowires for molecular junctions
- Spin States of holes in ge/si nanowire quantum dots.
- Structural Characterisation of GaP < 111 > B Nanowires by HRTEM
- Surface-enhanced Raman scattering of rhodamine 6G on nanowire arrays decorated with gold nanoparticles
- Tip-enhanced Raman scattering of p-thiocresol molecules on individual gold nanoparticles
- Transients in the Formation of Nanowire Heterostructures.
- Tunneling Anisotropic Magnetoresistance in Co/AlOx/Au Tunnel Junctions.
- Vertical InAs Nanowire Wrap Gate Transistors on Si Substrates
- Vertical enhancement-mode InAs nanowire field-effect transistor with 50-nm wrap gate
- 2007
- Assembling ferromagnetic single-electron transistors by atomic force microscopy
- Core-shell InP-CdS nanowires: fabrication and study
- Correlation lengths in stacked InAs quantum dot systems studied by cross-sectional scanning tunnelling microscopy
- Detection of charge states in nanowire quantum dots using a quantum point contact
- Direct Measurement of the Spin-Orbit Interaction in a Two-Electron InAs Nanowire Quantum Dot
- Directed growth of branched nanowire structures
- Epitaxial Growth of Indium Arsenide Nanowires on Silicon Using Nucleation Templates Formed by Self-Assembled Organic Coatings
- Exciton fine structure splitting in InP quantum dots in GaInP
- Few electron double quantum dots in InAs/InP nanowire heterostructures
- Formation of 1D quantum structures via guided self-assembly
- GaAs/AlGaAs nanowire heterostructures studied by scanning tunneling microscopy
- Gallium phosphide nanowires as a substrate for cultured neurons
- Growth and characterization of III-V semiconductor nanowires and branched nanowire structures
- Height-controlled nanowire branches on nanotrees using a polymer mask
- High-speed nanometer-scale imaging for studies of nanowire mechanics
- InAs nanowires grown by MOVPE
- InAs nanowires grown by MOVPE
- Large magnetoresistance in Co/Ni/Co ferromagnetic single electron transistors
- Large magnetoresistance in Co/Ni/Co ferromagnetic single electron transistors
- Locating nanowire heterostructures by electron beam induced current
- Measurements of the band gap of wurtzite InAs1−xPx nanowires using photocurrent spectroscopy
- Morphology of axial heterostructure nanowires and branched heterostrudture nanotrees
- Morphology of epitaxial III-V nanowires and branched nanotrees
- Nanofluidics in hollow nanowires
- Nanoscaled ferromagnetic single electron transistors
- Nanowire field-effect transistor
- Probing spin accumulation in Ni/Au/Ni single-electron transistors with efficient spin injection and detection electrodes
- Properties of electrical contacts to filamentary nanocrystals
- Quantum dots defined in InAs quantum wires by local gate electrodes
- Quantum dots defined in InAs quantum wires by local gate electrodes
- Quantum-confinement effects in InAs-InP core-shell nanowires
- Quantum-dot thermometry
- Semiconductor nanowires: novel applications in transport, optics and nanomechanics
- Shear stress measurements on InAs nanowires by AFM manipulation
- Single electron pumping in InAs nanowire double quantum dots
- Size-selected compound semiconductor quantum dots by nanoparticle conversion
- Strain and shape of epitaxial InAs/InP nanowire superlattice measured by grazing incidence X-ray techniques
- Strain mapping in free-standing heterostructured wurtzite InAs/InP nanowires
- Structural characterization of GaP<111> nanowires by HRTEM
- Sulfur passivation for ohmic contact formation to InAs nanowires
- Surface diffusion effects on growth of nanowires by chemical beam epitaxy
- The Swedish Nanotechnology Program
- The morphology of axial and branched nanowire heterostructures
- The structure of < 1 1 1 > B oriented GaP nanowires
- The structure of <111>B oriented GaP nanowires
- Thermoelectric properties of heterostructure InAs/InP nanowires
- Understanding the 3D structure of GaAs<111> nanowires
- 2006
- A nanowire-based multiple quantum dot memory
- A university curriculum in Engineering Nanoscience - the inverted-T strategy
- A university curriculum in Engineering Nanoscience - the inverted-T strategy
- Alloy ordering in core-shell nanowires
- Atomic scale probing of AlGaAs encased GaAs/InGaAs heterostructure nanowires
- Atomic scale structure and growth of nanowires and nanowire heterostructures studied by STM
- Atomic scale structure and morphology of nanowire heterostructures studied by scanning tunneling microscopy
- Au-free epitaxial growth of InAs nanowires
- Au-free epitaxial growth of InAs nanowires
- Crystal Structure of Branched Gallium Phosphide-based Nanotrees
- Crystal structure of branched epitaxial III-V nanotrees
- Electrical properties of three-terminal InAs nanowire junctions
- Electrical properties of three-terminal InAs nanowire junctions
- Epitaxial growth of III-V nanowires on silicon substrates
- Epitaxial growth of III-V nanowires on silicon substrates
- Epitaxially grown III-V nanowires for quantum device applications
- Fabrication and electron transport study of three-terminal InAs nanowire junctions
- Fabrication, optical characterization and modeling of strained core-shell nanowires
- Fabrication, optical characterization and modelling of strain core-shell nanowires
- Few-electron quantum dots defined in InAs quantum wires by local gate electrodes
- GaAs/AlInP core/shell nanowires: phase segregation and morphology
- Grazing incidence X-ry measurements of epitaxial nanowires
- Growth and characterization of GaAs/AlInP core/shell nanowires with subsequent conversion into nanotubes
- Growth and characterization of defect free GaAs nanowires
- Growth and characterization of single crystal semiconductor nanowires
- Growth and nanoscale properties of semiconductor nanowires
- Guiding axons using nanowires
- Guiding nerve cells with nanowires
- Imaging a one-electron quantum dot in an AnAs/InP nanowire
- Imaging few-electron quantum dots in InAs/InP nanowires: imaging experiments
- Improved subthreshold slope in an InAs nanowire heterostructure field-effect transistor
- Improving InAs nanotree growth with composition-controlled Au-In nanoparticles
- InAs1-xPx Nanowires for Device Engineering
- Infrared photodetectors in heterostructure nanowires
- Investigations of InAs surface dots on InP
- Investigations of InAs surface dots on InP
- Lithographically aided self-assembly of nanowire devices
- Materials, physics and device aspects of semiconductor nanowires
- Nanofluidics in hollow nanowires
- Nanowire technology for realization of novel devices
- Nanowire-based multiple quantum dot memory
- Nanowire-based one-dimensional electronics
- Nanowire-based one-dimensional electronics
- Nanowires as building blocks in quantum-based devices
- Nanowires for electronics and photonics
- Nanowires for future electronic devices
- Nanowires for photonics and electronics
- Nanowires for quantum devices and future nanoelectronics
- Nanowires for realization of quantum structures and devices
- Nanowires in 3 dimensions
- Novel applications based on nanowires
- Novel applications based on nanowires
- On the crystallography of III (Ga, In) - V (P, As) nanowires
- Optical imaging of vibrating nanowires with high temporal and såatial accuracy
- Optical interference from pairs and arrays of nanowires
- Optimization of Au-assisted InAs nanowires grown by MOVPE
- Orbital and spin effects in single- and double-quantum dots defined in InAs/InP nanowire heterostructures
- Phase Segregation in AlInP Shells on GaAs Nanowires
- Position-controlled interconnected InAs nanowire networks
- Probing growth defects inside nanowires
- Progress in materials grwoth and processing technology for realization of nanowire devices
- Quantum dots defined in InAs quantum wires by local gate electrodes
- Self-assembling 1D–3D nanowire devices
- Self-assembly of nanowires using lithographic control of nucleation processes
- Semiconductor nanowires: from self-assembly to quantum devices
- Series summation of fractal fluctuations in electron billiard arrays
- Series summation of fractal fluctuations in electron billiard arrays
- Strain mapping in heterostructured wurtzite InAs/InP nanowires
- Structural control during the growth of Si, Ge and hybrid nanowires
- Structural properties of (111)B-oriented III-V nanowires
- Synthesis and integration of nanowires
- Top-down meets bottom-up in guided self-assembly of nanowire devices
- Towards the realization of a charge detector for nanowire quantum dots
- Tunable double quantum dots in InAs nanowires defined by local gate electrodes
- Tunable double quantum dots in InAs nanowires defined by local gate electrodes
- Unified model of fractal conductance fluctuations for diffusive and ballistic semiconductor devices
- Vertical InAs nanowire wrap-gate FETs
- Vertical high mobility wrap-gated InAs nanowire transistors
- Vertical high-mobility wrap-gated InAs nanowire transistor
- Vertical wrap-gated nanowire transistors
- 2005
- A mass-transport model for semiconductor nanowire growth
- A new understanding of au-assisted growth of III-V semiconductor nanowires
- Band-gap engineering in III-V nanowires
- Cathodoluminescence Studies of AlGaAs/GaAs Core-Shell Nanowires
- Device properties of InAs/InP nanowire heterostructures
- Direct observation of the atomic scale structure inside a nanowire
- Electrical contacts technology for single nanowires and molecules
- Epitaxially grown GaP/GaAs1-xPx/GaP double heterostructure nanowires for optical applications
- Epitaxielle Kristallnadeln und -bäume
- Failure of the vapor-liquid-solid mechanism in Au-assisted MOVPE growth of InAs nanowires
- Failure of the vapor-liquid-solid mechanism in Au-assisted growth of InAs nanowires
- Growth and optical properties of GaAs-GaInP core-shell nanowires
- Growth and optical properties of strained GaAs-GaxIn1-xP core-shell nanowires
- Growth and physics of semiconductor nano-wires and dots
- Growth and physics of semiconductor nano-wires and dots
- Growth of freestanding III-V nanowires with chemical beam epitaxy
- Growth, properties and applications of semiconductor nanowires
- Importance of the particle/wire interface for defect free nanowire growth
- Influence of the spacer layer distance in stacked InAs/InP quantum dots, studied by cross-sectional scanning tunneling microscopy
- Inorganic nanowire devices
- Investigating InAs nanowires on InAs(111) using scanning tunneling microscopy
- Low-dimensional physics and applications of semiconductor nanowires
- Mass transport model for semiconductor nanowire growth
- Microwave detection at 110 GHz by nanowires with broken symmetry
- Nanoelectronics and -physics using self-assembled nanowires
- Nanoimprint lithography and life science applications
- Nanometer-scale two-terminal semiconductor memory operating at room temperature
- Nanoscience and Nanotechnology in education and research in Sweden and at Lund University
- Nanowire research in basic science and applications
- Nanowire single-electron memory
- Nanowires science and technology for future electronic devices
- Novel one-dimensional materials and devices
- One-dimensional epitaxial compound semiconductor structures
- Photocurrent spectroscopy on self-assembled InAs quantum dots embedded in InP
- Photocurrent spectroscopy on single heterostructure nanowires
- Preserved symmetries in nonlinear electric conduction
- Random telegraph noise in the photon emission from semiconductor quantum dots
- Role of the Au/III-V interaction in the Au-assisted growth of III-V branched nanostructures
- Self-assembled InAs nanowire networks
- Self-assembly and properties of semiconductor nanowires
- Semiconductor nanowires as a novel electronic materials technology for future electronic devices
- Semiconductor nanowires as a novel electronic materials technology for future electronic devices
- Semiconductor nanowires as a novel electronic materials technology for future electronic devices
- Semiconductor nanowires for future electronic devices
- Semiconductor nanowires for future nanoelectronics
- Semiconductor nanowires from materials science and device physics perspectives
- Semiconductor nanowires: materials issues and device applications
- Semiconductor nanowires: progress in materials science and nanoelectronics
- Semiconductor nanowires: progress in materials science, physics and nano-electronics
- Single-electron memories based on nanowires
- Spin relaxation in InAs nanowires studied by tunable weak antilocalization
- Strain effects on individual quantum dots: Dependence of cap layer thickness
- Sulfur passivation for formation of Ohmic contacts to InAs nanowire devices
- The growth mechanism of freestanding III-V nanowires
- Transport measurements on double quantum dot heterostructures in InAs/InP nanowires
- Transport studies on nanowire quantum dots
- Transport studies on nanowire quantum dots
- Tunable double quantum dots in InAs nanowires defined by local gate electrodes
- Tunable effective g factor in InAs nanowire quantum dots
- Tuning of growth of III-V semiconductor nanowires and nanotrees by analytical electron microscopy
- Vertical high mobility wrap-gated InAs nanowire transistor
- Wrap-gated InAs nanowire field effect transistor
- Wrap-gated InAs nanowire field-effect transistor
- 2004
- A cross-sectional STM study of nanowhiskers
- Charging control of InP/GaInP quantum dots by heterostructure design
- Chemical, positional and structural control of branched nanowire heterostructures (nanotrees) viewed by HREM and HAADF
- Crystal growth, properties and applications of semiconductor nanowires
- Defect-free InP nanowires grown in 001 direction on InP(001)
- Direct atomically resolved imaging inside a nanowire
- Direct atomically resolved imaging inside a nanowire
- Direct atomically resolved imaging inside a nanowire
- Direct imaging of the atomic structure inside a nanowire by scanning tunnelling microscopy
- Electrical properties of InAs-based nanowires
- Electron transport in InAs nanowires and heterostructure nanowire devices
- Engineering nanoscience - a new education program to satisfy the future needs of industry
- Epitaxial III-V nanowires on silicon
- Few-electron quantum dots in nanowires
- Free-standing semiconductor nanowires - materials science, physics and devices
- Growth and assembly of semiconductor nanowires: new materials for physics and applications
- Growth and characterization of GaP-GaP-InP nanotrees
- Growth mechanisms for GaAs nanowires grown in CBE
- Growth mechanisms for GaAs nanowires grown in CBE
- Growth of GaP nanotree structures by sequential seeding of 1D nanowires
- Growth of complex branched nanostructures resembling trees via multiple seeding by gold aerosol nanoparticles
- Growth of nanotrees by sequential seeding of 1D nanowires.
- Growth of one-dimensional nanostructures in MOVPE
- Immunolabeling and PTA staining of budded baculovirus
- Influence of the spacer layer distance in stacked InAs/InP quantum dots, studied by cross-sectional scanning tunneling microscopy
- Interband transitions in InAs quantum dots in InP studied by photoconductivity and photoluminescence techniques
- Intersubband photoconductivity of self-assembled InAs quantum dots embedded in InP
- Nanoimprint - a tool for realizing nano-bio research
- Nanoimprint – a tool for realizing nano-bio research
- Nanotechnology as basis for novel devices
- Nanotrees from sequential seeding of 1D nanowires
- Nanovetenskap: Forskning, undervisning och tillämpningar
- Nanowire arrays - a toolbox for the future
- Nanowire arrays defined by nanoimprint lithography
- Nanowires: an overview
- Novel mamotechnology approaches towards future electronics
- Novel nanoelectronic triodes and logic devices with TBJs
- Photoexcitation of excitons in self-assembled quantum dots
- Probing of individual semiconductor nanowhiskers by TEM-STM
- Probing of individual semiconductor nanowhiskers by TEM-STM
- Quantum devices in semiconductor nanowires
- Quantum dots in semiconductor nanowires
- Role of surface diffusion in chemical beam epitaxy of InAs nanowires
- Room-temperature nanoelectronic logic devices with ballistic junctions
- Scanning tunneling microscope and luminescence nanocharacterization of semiconductor quantum dots
- Semiconductor nanowires for 0D and 1D physics and applications
- Semiconductor nanowires for novel one-dimensional devices
- Semiconductor nanowires for quantum devices and as designable new materials
- Semiconductor nanowires for quantum devices and as designable new materials
- Semiconductor nanowires from materials science, physics and device perspectives
- Semiconductor nanowires: new materials for physics and applications
- Size- and shape-controlled GaAs nano-whiskers grown by MOVPE: a growth study
- Solid-phase diffusion mechanism for GaAs nanowire growth
- Spectroscopic studies of random telegraph noise in small InP quantum dots in GaxIn1-xP
- Stacked InAs quantum dots in InP studied by cross-sectional scanning tunnelling microscopy
- Symmetry of Two-Terminal Nonlinear Electric Conduction
- Synthesis of Branched “Nanotrees” for Optical and Electronic Applications
- Synthesis of branched 'nanotrees' by controlled seeding of multiple branching events
- The growth of colloidal silver nano-wires and gold platelets with magnetic field
- Three-photon cascade from single self-assembled InP quantum dots
- Transport via quantum dots in one-dimensional nanowires
- 2003
- Correlation between overgrowth morphology and optical properties of single self-assembled InP quantum dots
- Electric field effects in single semiconductor quantum dots observed by scanning tunneling luminescence
- Fabrication and time-resolved studies of visible microdisk lasers
- Fabrication of individually seeded nanowire arrays by vapour-liquid-solid growth
- Heterostructures incorporated in one-dimensional semiconductor materials and devices
- Luminescence polarization of ordered GaInP/InP islands
- Metal nanoelectrodes for molecular transistor and investigation of electron transport in molecular systems.
- Nanoimprint technology for fabrication of three-terminal ballistic junction devices in GaInAs/InP
- One dimensional heterostructures and resonant tunneling in III-V nanowires
- Optical and theoretical investigations of small InP quantum dots in GaxIn1-xP
- Sharp exciton emission from single InAs quantum dots in GaAs nanowires
- Single-electron transistors in heterostructure nanowires.
- Site control of InAs quantum dots on a patterned InP surface: As/P exchange reactions
- Special issue on nanoelectronics
- Spontaneous InAs quantum dot nucleation at strained InP/GaInAs interfaces
- Surviving conduction symmetries in non-linear response
- The influence of confining wall profile on quantum interference effects in etched Ga0.25In0.75As/InP billiards
- Transport through an isolated artificial molecule formed from stacked self-assembled quantum dots
- Tunable nonlinear current-voltage characteristics of three-terminal ballistic nanojunctions
- Unidirectional electron flow in a nanometer-scale semiconductor channel: A self-switching device
- 2002
- A novel device principle for nanoelectronics
- A novel frequency-doubling device based on three-terminal ballistic junction
- A novel frequency-multiplication device based on three-terminal ballistic junction
- A proposal to estimate homogeneous and inhomogeneous energy level broadening in double barrier resonant tunneling diodes
- AFM manipulation of carbon nanotubes: realization of ultra-fine nanoelectrodes
- Anti-domain-free GaP, grown in atomically flat (001) Si sub-mu m-sized openings
- Attractive potential around a buried metallic gate in a Schottky Collector Hot Electron Transistor
- Comparision between (111)B and (100) III-V nanowhiskers
- Compositional variation of AlGaN epitaxial films on 6H-SiC substrates determined by cathodoluminescence.
- Correlation spectroscopy of excitons and biexcitons on a single quantum dot
- Coupling between lateral modes in a vertical resonant tunneling structure
- Designed emitter states in resonant tunneling through quantum dots
- Direct observation of the molten state of nanometer-sized particles with an atomic force microscope: A feasibility study
- Electron accumulation in small and larger semiconductor quantum dots
- Electron beam induced luminescence studies of low-dimensional semiconducotor structures
- Electron beam induced luminescence studies of low-dimensional semiconducotor structures
- Epitaxially overgrown, stable W-GaAs Schottky contacts with sizes down to 50 nm
- Fabrication and modeling of a combined gold nanoparticle-carbon nanotube single electron transistor
- Growth and characterization of GaAs and InAs nano-whiskers and InAs/GaAs heterostructures
- Heterointerfaces in III-V semiconductor nanowhiskers
- Heterostructures in one-dimensional nanowires
- High frequency characterization of a GaInAs/InP electronic waveguide T-branch switch
- High frequency characterization of a GaInAs/InP electronic waveguide T-branch switch
- Metalorganic vapor phase epitaxy-grown GaP/GaAs/GaP and GaAsP/GaAs/GaAsP n-type resonant tunnelling diodes
- Nanoimprint lithography for fabrication of three-terminal ballistic junctions in InP/GaInAs
- Nanoscale tungsten aerosol particles embedded in GaAs
- Nanowire resonant tunneling diodes
- Nanoxerography: nanostructured deposition of aerosol particles by charge printing
- Observation of the molten state of nano-particles with an atomic force microscope
- One-dimensional heterostructures in semiconductor nanowhiskers
- One-dimensional steeplechase for electrons realized
- Optical studies of single quantum dots in microdisks
- Optically induced charge storage and current generation in InAs quantum dots
- Photon mapping of quantum dots using a scanning tunneling microscope
- Photon mapping of single quantum dots by scanning tunneling microscopy induced luminescence spectroscopy
- Quantum behavior as well as room-temperature and 50 GHz operations of novel nonlinear devices and nanomaterials
- Quantum-dot-induced ordering in GaxIn1-xP/InP islands
- Reduction of the Schottky barrier height on silicon carbide using Au nano-particles
- Reduction of the barrier height and enhancement of tunneling current of titanium contacts using embedded Au nano-particles on 4H and 6H silicon carbide
- Resonant tunneling through coupled self-assembled quantum dots and the influence of inhomogeneous broadening
- Single InP/GaInP quantum dots studied by scanning tunneling microscopy and scanning tunneling microscopy induced luminescence
- Single-electron tunneling effects in a metallic double dot device
- Site-control of InAs quantum dots on a patterned InP surface: As/P exchange reactions
- Site-controlled Ge quantum dot growth on Si by the use of electron beam pre-patterning
- Size- and composition controlled Au-In nanoalloy aerosol particles
- Thin layers of GaInP, GaP and GaAsP in metalorganic vapour phase epitaxy-grown resonant tunnelling diodes
- Three-terminal ballistic junctions: new building blocks for functional devices in nanoelectronics
- Ultrahigh vacuum scanning probe investigations of metal induced void formation in SiO2/Si(111))
- 1993
- 1988
