Surface and core contribution to 1/f-noise in InAs nanowire metal-oxide-semiconductor field-effect transistors
Författare
Summary, in English
By measuring 1/f-noise in wrap-gated InAs nanowire metal-oxide-semiconductor field-effect transistors with transport dominating, controllably, in either an inner, core channel, or an outer, surface channel, it is possible to accurately evaluate the material quality related Hooge-parameter, alpha(H), with reduced interference from the surface properties. The devices show low values of alpha(H) similar to 4 x 10(-5). At forward bias, where the data suggest that the 1/f-noise is dominated by the contribution from the high-k interface, devices show low values of normalized noise spectral density. (C) 2013 AIP Publishing LLC.
Publiceringsår
2013
Språk
Engelska
Publikation/Tidskrift/Serie
Applied Physics Letters
Volym
103
Issue
3
Fulltext
Länkar
Dokumenttyp
Artikel i tidskrift
Förlag
American Institute of Physics (AIP)
Ämne
- Electrical Engineering, Electronic Engineering, Information Engineering
Nyckelord
- Nanowire
- Noise
- mobility fluctuations
- number fluctutations
- InAs
- Transistor
- MOSFET
- FET
- high-k
- hf02
- al203
Status
Published
Projekt
- EIT_WWW Wireless with Wires
Forskningsgrupp
- Nano
ISBN/ISSN/Övrigt
- ISSN: 0003-6951