A 7.5 mW 9 MHz CT Delta-Sigma Modulator in 65 nm CMOS with 69 dB SNDR and Reduced Sensitivity to Loop Delay Variations
Publikation/Tidskrift/Serie: IEEE Asian Solid State Circuits Conference (A-SSCC), 2012
Förlag: IEEE--Institute of Electrical and Electronics Engineers Inc.
This paper presents a 3rd-order, 3-bit continuous time (CT) Delta-Sigma modulator for an LTE radio receiver. By adopting a return-to-zero (RZ) pulse in the innermost DAC, the modulator shows a reduced sensitivity to loop-delay variations, and the additional loop delay compensation usually needed in CT modulators can be omitted. The modulator has been implemented in a 65nm CMOS process, where it occupies an area of 0.2mmx0.4mm. It achieves an SNR of 71dB and an SNDR of 69dB over a 9MHz bandwidth with an oversampling ratio of 16. Power consumption is 7.5mW from a 1.2V supply, for a figure-of-merit of 181fJ/conversion.
- Electrical Engineering, Electronic Engineering, Information Engineering
IEEE Asian Solid-State Circuits Conference (ASSCC), 2012
- EIT_DRAGON Digital Radio Architectures Going Nanoscale
- Data converters & RF-lup-obsolete
- ISBN: 978-1-4673-2468-8