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Tunneling-based devices and circuits

In English

Författare

Summary, in English

We describe the implementation of a gated resonant tunneling diode and its application in a wavelet generator. The GaAs-based device is fabricated by embedding a metal gate directly above a double barrier heterostructure with a peak current of 120 kA/cm2. The gate is used to modulate the tunneling current via the Schottky depletion around the buried metal. We integrate the gated tunnel diodes in oscillator circuits and use the gate to form RF-bursts or wavelets. Measured data in the K- and V-band verify a good control of the length, phase, and pulse position reaching for pulses with lengths well below 100 ps.

Publiceringsår

2010

Språk

Engelska

Sidor

190-193

Publikation/Tidskrift/Serie

2010 IEEE International Conference on IC Design and Technology (ICICDT)

Dokumenttyp

Konferensbidrag

Förlag

IEEE - Institute of Electrical and Electronics Engineers Inc.

Ämne

  • Electrical Engineering, Electronic Engineering, Information Engineering

Conference name

IEEE International Conference on IC Design and Technology (ICICDT)

Conference date

2010-06-04

Conference place

MINATEC, Grenoble, France

Status

Published

Projekt

  • EIT_HSWC:RFNano RF tranceivers and nano devices

Forskningsgrupp

  • Elektronikkonstruktion
  • Nano

ISBN/ISSN/Övrigt

  • ISBN: 978-1-4244-5773-1