Tunneling-based devices and circuits
Publikation/Tidskrift/Serie: 2010 IEEE International Conference on IC Design and Technology (ICICDT)
Förlag: IEEE--Institute of Electrical and Electronics Engineers Inc.
We describe the implementation of a gated resonant tunneling diode and its application in a wavelet generator. The GaAs-based device is fabricated by embedding a metal gate directly above a double barrier heterostructure with a peak current of 120 kA/cm2. The gate is used to modulate the tunneling current via the Schottky depletion around the buried metal. We integrate the gated tunnel diodes in oscillator circuits and use the gate to form RF-bursts or wavelets. Measured data in the K- and V-band verify a good control of the length, phase, and pulse position reaching for pulses with lengths well below 100 ps.
- Electrical Engineering, Electronic Engineering, Information Engineering
IEEE International Conference on IC Design and Technology (ICICDT)
- EIT_HSWC:RFNano RF tranceivers and nano devices
- ISBN: 978-1-4244-5773-1