A Radio Frequency Single-Electron Transistor Based on an InAs/InP Heterostructure Nanowire.

Summary, in English

We demonstrate radio frequency single-electron transistors fabricated from epitaxially grown InAs/InP heterostructure nanowires. Two sets of double-barrier wires with different barrier thicknesses were grown. The wires were suspended 15 nm above a metal gate electrode. Electrical measurements on a high-resistance nanowire showed regularly spaced Coulomb oscillations at a gate voltage from -0.5 to at least 1.8 V. The charge sensitivity was measured to 32 microe rms Hz (-1/2) at 1.5 K. A low-resistance single-electron transistor showed regularly spaced oscillations only in a small gate-voltage region just before carrier depletion. This device had a charge sensitivity of 2.5 microe rms Hz (-1/2). At low frequencies this device showed a typical 1/ f noise behavior, with a level extrapolated to 300 microe rms Hz (-1/2) at 10 Hz.

• Författare: Henrik Nilsson; Tim Duty; Simon Abay; Chris Wilson; Jakob Wagner; Claes Thelander; Per Delsing; Lars Samuelson
• Avdelning/ar: Fasta tillståndets fysik; Centrum för analys och syntes
• Publiceringsår: 2008
• Språk: Engelska
• Sidor: 872-875
• Publikation/Tidskrift/Serie: Nano Letters
• Volym: 8
• Issue: 3
• Länkar: http://dx.doi.org/10.1021/nl0731062
• Dokumenttyp: Artikel i tidskrift
• Förlag: The American Chemical Society (ACS)
• Ämne: Nano Technology
• Status: Published
• ISBN/ISSN/Övrigt: ISSN: 1530-6992