Du är här

A Radio Frequency Single-Electron Transistor Based on an InAs/InP Heterostructure Nanowire.

Författare:
Publiceringsår: 2008
Språk: Engelska
Sidor: 872-875
Publikation/Tidskrift/Serie: Nano letters
Volym: 8
Nummer: 3
Dokumenttyp: Artikel
Förlag: American Chemical Society

Sammanfattning

We demonstrate radio frequency single-electron transistors fabricated from epitaxially grown InAs/InP heterostructure nanowires. Two sets of double-barrier wires with different barrier thicknesses were grown. The wires were suspended 15 nm above a metal gate electrode. Electrical measurements on a high-resistance nanowire showed regularly spaced Coulomb oscillations at a gate voltage from -0.5 to at least 1.8 V. The charge sensitivity was measured to 32 microe rms Hz (-1/2) at 1.5 K. A low-resistance single-electron transistor showed regularly spaced oscillations only in a small gate-voltage region just before carrier depletion. This device had a charge sensitivity of 2.5 microe rms Hz (-1/2). At low frequencies this device showed a typical 1/ f noise behavior, with a level extrapolated to 300 microe rms Hz (-1/2) at 10 Hz.

Disputation

Nyckelord

  • Technology and Engineering

Övriga

Published
Yes
  • ISSN: 1530-6984

Box 117, 221 00 LUND
Telefon 046-222 00 00 (växel)
Telefax 046-222 47 20
lu [at] lu [dot] se

 

Fakturaadress: Box 188, 221 00 LUND
Organisationsnummer: 202100-3211
Om webbplatsen