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A GaN HEMT power amplifier with variable gate bias for envelope and phase signals

Författare:
Publiceringsår: 2007
Språk: Engelska
Sidor: 108-111
Dokumenttyp: Konferensbidrag
Förlag: IEEE Press

Sammanfattning

This paper describes the design, simulation and measurement of a GaN power amplifier suitable for envelope and phase signal combination. The low-frequency envelope signal is used to vary the gate (bias) voltage of the device, resulting in a pulse width modulated drain voltage, while modulation of supply voltage or current is avoided. The test circuit is implemented using a discrete GaN HEMT power amplifier and discrete surface-mount passive components assembled on a PCB. Measurements showed a maximum drain efficiency of 59% at 360 MHz, at an output power of 29 dBm. The output power as a function of the gate bias voltage varied between 3 and 29 dBm, with the drain efficiency varying between 6 and 59%.

Disputation

Nyckelord

  • Technology and Engineering

Övriga

Norchip
2007-11-19/2007-11-20
Aalborg, Denmark
Published
Yes
  • Elektronikkonstruktion
"©2007 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE."
  • ISBN: 978-1-4244-1516-8

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