Javascript is not activated in your browser. This website needs javascript activated to work properly.
Du är här

Enhanced Zeeman splitting in Ga0.25In0.75As quantum point contacts

  • T. P. Martin
  • A. Szorkovszky
  • A. P. Micolich
  • A. R. Hamilton
  • C. A. Marlow
  • H. Linke
  • R. P. Taylor
  • Lars Samuelson
Publiceringsår: 2008
Språk: Engelska
Publikation/Tidskrift/Serie: Applied Physics Letters
Volym: 93
Nummer: 1
Dokumenttyp: Artikel
Förlag: American Institute of Physics


The strength of the Zeeman splitting induced by an applied magnetic field is an important factor for the realization of spin-resolved transport in mesoscopic devices. We measure the Zeeman splitting for a quantum point contact etched into a Ga0.25In0.75As quantum well, with the field oriented parallel to the transport direction. We observe an enhancement of the Lande g-factor from vertical bar g*vertical bar=3.8 +/- 0.2 for the third subband to vertical bar g*vertical bar=5.8 +/- 0.6 for the first subband, six times larger than in GaAs. We report subband spacings in excess of 10 meV, which facilitates quantum transport at higher temperatures. (C) 2008 American Institute of Physics.



  • Physics and Astronomy


  • ISSN: 0003-6951

Box 117, 221 00 LUND
Telefon 046-222 00 00 (växel)
Telefax 046-222 47 20
lu [at] lu [dot] se

Fakturaadress: Box 188, 221 00 LUND
Organisationsnummer: 202100-3211
Om webbplatsen