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GaMnAs: Layers, Wires and Dots

Författare:
Publiceringsår: 2008
Språk: Engelska
Sidor: 1001-1012
Publikation/Tidskrift/Serie: ACTA PHYSICA POLONICA A
Volym: 114
Nummer: 5
Dokumenttyp: Konferensbidrag
Förlag: POLISH ACAD SCIENCES INST PHYSICS

Sammanfattning

Thin layers of GaMnAs ferromagnetic semiconductor grown by molecular beam epitaxy on GaAS(001) substrates were studied. To improve their magnetic properties the post-growth annealing procedures were applied, using the surface passivation layers of amorphous arsenic. This post-growth treatment effectively increases the ferromagnetic-to-paramagnetic phase transition temperature in GaMnAs, and provides surface-rich MnAs layer which can be used for formation of low-dimensional structures such as superlattices. If the surface rich it-InAs layer consists of MnAs dots, then it is possible to grow Mn-doped GaAs nanowires.

Disputation

Nyckelord

  • Physics and Astronomy

Övrigt

37th International School on the Physics of Semiconducting Compounds
2014-06-08
Jaszowiec, POLAND
Published
Yes
  • ISSN: 0587-4246

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