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Domain-wall induced magneto-resistive memory in ferromagnetic (Ga, Mn) As nanostructures

Författare:
  • Tadeusz Wosinski
  • Tadeusz Figielski
  • Andrzej Morawski
  • Andrzej Makosa
  • Viktor Osinniy
  • Jerzy Wrobel
  • Janusz Sadowski (Dr)
Publiceringsår: 2008
Språk: Engelska
Sidor: S111-S114
Publikation/Tidskrift/Serie: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volym: 19
Dokumenttyp: Konferensbidrag
Förlag: SPRINGER

Sammanfattning

Novel magneto-resistive memory effect is demonstrated, which appears in lithographically patterned Y-shaped, three-terminal nanostructures, consisting of three nanowires joined in one point, formed in the epitaxial layer of a ferromagnetic (Ga, Mn) As semiconductor. The effect, in which the zero-field resistance of a pair of nanowires depends on the direction of the previously applied magnetic field, results from a rearrangement of magnetic domain walls, contributing an extra resistance, between different pairs of nanowires in the structure. Two-state behaviour of the nanostructure resistance provides its usefulness for applications in non-volatile memory devices.

Disputation

Nyckelord

  • Physics and Astronomy

Övriga

12th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors
2014-09-10
Berlin, GERMANY
Published
Yes
  • ISSN: 0957-4522

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