Domain-wall induced magneto-resistive memory in ferromagnetic (Ga, Mn) As nanostructures
Publikation/Tidskrift/Serie: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Novel magneto-resistive memory effect is demonstrated, which appears in lithographically patterned Y-shaped, three-terminal nanostructures, consisting of three nanowires joined in one point, formed in the epitaxial layer of a ferromagnetic (Ga, Mn) As semiconductor. The effect, in which the zero-field resistance of a pair of nanowires depends on the direction of the previously applied magnetic field, results from a rearrangement of magnetic domain walls, contributing an extra resistance, between different pairs of nanowires in the structure. Two-state behaviour of the nanostructure resistance provides its usefulness for applications in non-volatile memory devices.
- Physics and Astronomy
12th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors
- ISSN: 0957-4522