Publikationer
Structural Characterisation of GaP < 111 > B Nanowires by HRTEM
Avdelning/ar:
Publiceringsår: 2008
Språk: Engelska
Sidor: 229-232
Publikation/Tidskrift/Serie: Microscopy of Semiconducting Material 2007
Volym: 120
Dokumenttyp: Konferensbidrag
Förlag: Springer
Sammanfattning
GaP < 111 > B nanowires are dominated by (111) twins orthogonal to the growth direction and show well-developed {111} side-facets. Based on this, a 3D-model has been constructed with a cross-section of an octahedron used as a building block. The twins can be of ortho- or para type i.e. by 60 degrees about the growth axis or 180 degrees in the twin plane. The segment thickness variation follows an exponential distribution with a clear dependence oil growth ternperature. Multislice simulations show different features of the twin types that are useful for further characterisation.
Disputation
Nyckelord
- Physics and Astronomy
Övrigt
15th Conference on Microscopy of Semiconducting Materials
2013-04-03
Cambridge, ENGLAND
Published
Yes
- ISSN: 0930-8989
- ISBN: 978-1-4020-8614-4

