Defect-free InP nanowires grown in  direction on InP(001)
Publikation/Tidskrift/Serie: Applied Physics Letters
Förlag: American Institute of Physics
We report on  InP nanowires grown by metalorganic vapor phase epitaxy directly on (001) InP substrates. Characterization by scanning electron microscopy and transmission electron microscopy reveals wires with nearly square cross sections and a perfect zinc-blende crystalline structure that is free of stacking faults. Photoluminescence measurements of single  nanowires exhibit a narrow and intense emission peak at approximately 1.4 eV, whereas <111>B grown reference wires show additional broad luminescence peaks at lower energy. The origin of this uncommon wire growth direction  is discussed as a means of controlled formation of [00l]-oriented nanowires on (001) substrates. (C) 2004 American Institute of Physics.
- ISSN: 0003-6951