TEM determination of directions of (Ga,Mn)As nanowires grown by MBE on GaAs(001) substrates
Författare
Summary, in English
P>The structure of GaMnAs nanowires (NW) with nominal Mn concentration of up to 7 at% was investigated by transmission electron microscopy. The (Ga,Mn)As NW were grown on epiready GaAs(001) n-type wafers by molecular beam epitaxy. The crystal structure of the NW was determined to be zinc-blende. NW with Mn concentrations lower than 5 at% grow along the << 111 >> direction. NW with higher Mn concentrations grow along the << 110 >> direction and reveal a branching structure. The main nanowire and branches grow along the << 110 >> directions belonging to only one {111} plane.
Avdelning/ar
Publiceringsår
2009
Språk
Engelska
Sidor
115-118
Publikation/Tidskrift/Serie
Journal of Microscopy
Volym
236
Issue
2
Länkar
Dokumenttyp
Artikel i tidskrift
Förlag
John Wiley & Sons Inc.
Ämne
- Physical Sciences
- Natural Sciences
Nyckelord
- TEM
- nanowires
- GaMnAs
- MBE
Status
Published
ISBN/ISSN/Övrigt
- ISSN: 0022-2720