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TEM determination of directions of (Ga,Mn)As nanowires grown by MBE on GaAs(001) substrates

Publiceringsår: 2009
Språk: Engelska
Sidor: 115-118
Publikation/Tidskrift/Serie: Journal Of Microscopy-Oxford
Volym: 236
Nummer: 2
Dokumenttyp: Artikel
Förlag: Wiley-Blackwell Publishing, Inc


P>The structure of GaMnAs nanowires (NW) with nominal Mn concentration of up to 7 at% was investigated by transmission electron microscopy. The (Ga,Mn)As NW were grown on epiready GaAs(001) n-type wafers by molecular beam epitaxy. The crystal structure of the NW was determined to be zinc-blende. NW with Mn concentrations lower than 5 at% grow along the << 111 >> direction. NW with higher Mn concentrations grow along the << 110 >> direction and reveal a branching structure. The main nanowire and branches grow along the << 110 >> directions belonging to only one {111} plane.



  • Physics and Astronomy
  • TEM
  • nanowires
  • GaMnAs
  • MBE


  • ISSN: 0022-2720

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