TEM determination of directions of (Ga,Mn)As nanowires grown by MBE on GaAs(001) substrates

Summary, in English

P>The structure of GaMnAs nanowires (NW) with nominal Mn concentration of up to 7 at% was investigated by transmission electron microscopy. The (Ga,Mn)As NW were grown on epiready GaAs(001) n-type wafers by molecular beam epitaxy. The crystal structure of the NW was determined to be zinc-blende. NW with Mn concentrations lower than 5 at% grow along the << 111 >> direction. NW with higher Mn concentrations grow along the << 110 >> direction and reveal a branching structure. The main nanowire and branches grow along the << 110 >> directions belonging to only one {111} plane.

• Författare: P. Dluzewski; Janusz Sadowski; S. Kret; J. Dabrowski; K. Sobczak
• Avdelning/ar: MAX IV-laboratoriet
• Publiceringsår: 2009
• Språk: Engelska
• Sidor: 115-118
• Publikation/Tidskrift/Serie: Journal of Microscopy
• Volym: 236
• Issue: 2
• Länkar: http://dx.doi.org/10.1111/j.1365-2818.2009.03255.x
• Dokumenttyp: Artikel i tidskrift
• Förlag: John Wiley & Sons Inc.
• Ämne: Physical Sciences; Natural Sciences
• Nyckelord: TEM; nanowires; GaMnAs; MBE
• Status: Published
• ISBN/ISSN/Övrigt: ISSN: 0022-2720