Heterogeneous integration of InAs on W/GaAs by MOVPE
Publikation/Tidskrift/Serie: Journal of Physics: Conference Series
Förlag: IOP Publishing Ltd
InAs has been grown on W-GaAs patterned substrates using MOVPE. The selectivity of the growth and the nucleation process has been studied as a function of the temperature and the V/III-ratio in the MOVPE reactor. It is shown that the W guides the nucleation of the InAs on the GaAs and that the islands formed may be used to embed metal features in a hybride InAs/GaAs structure in agreement with previous overgrowth studies of W-InAs and W-GaAs. The electrical properties has also been evaluated demonstrating a reduction of resistance by a factor 5 for a hybride structure with an embedded grating as compared to an InAs/GaAs reference sample.
- Electrical Engineering, Electronic Engineering, Information Engineering
- Condensed Matter Physics
17th International Vacuum Congress/13th International Conference on Surface Science/Internatinal Conference on Nanoscience and Technology
- ISSN: 1742-6588