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Growth and segregation of GaAs-AlxIn1-xP core-shell nanowires

Publiceringsår: 2010
Språk: Engelska
Sidor: 1755-1760
Publikation/Tidskrift/Serie: Journal Of Crystal Growth
Volym: 312
Nummer: 10
Dokumenttyp: Artikel
Förlag: Elsevier


The development of a ternary AlxIn1-xP shell grown around GaAs nanowires epitaxially grown in the (1) over bar (1) over bar (1) over bar direction has been studied. Morphology and composition of the shell have been studied using cross-sectional transmission electron microscopy (TEM). The side facets of the shell are found to develop dominant {1 (1) over bar 0} macro facets with small (approx. 5 nm) {1 1 (2) over bar} facets independent of the GaAs core side facets. Phase segregation is observed as AIP developing from the {1 1 (2) over bar} facets, while Al0.5In0.5P is found in the rest of the ternary shell. (C) 2010 Elsevier B.V. All rights reserved.



  • Chemistry
  • Physics and Astronomy
  • Core-shell nanowire
  • Segregation
  • GaAs
  • AlxIn1-xP


  • ISSN: 0022-0248

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