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Memristive and Memcapacitive Characteristics of a Au/Ti-HfO2-InP/InGaAs Diode

In English

Författare

Summary, in English

This letter reports on room-temperature electrical measurements of a Au/Ti-HfO2-InP/InGaAs diode fabricated by atomic layer deposition and electron beam lithography. At forward bias voltages, the diode shows memristor characteristics, whereas at reverse bias voltages, the diode can be characterized as a memcapacitor. A parasitic accumulation layer of charges formed at the high-kappa oxide/InP interface is shown to be the cause for the phenomena. The operation of the diode as a rewritable memory cell is also demonstrated. The results highlight novel memristive and memcapacitive properties of high-kappa dielectrics on III-V semiconductors and their potential applications in nanoelectronics.

Publiceringsår

2011

Språk

Engelska

Sidor

131-133

Publikation/Tidskrift/Serie

IEEE Electron Device Letters

Volym

32

Issue

2

Dokumenttyp

Artikel i tidskrift

Förlag

IEEE - Institute of Electrical and Electronics Engineers Inc.

Ämne

  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics

Nyckelord

  • High-kappa HfO2
  • InP/InGaAs
  • memcapacitors
  • memristors
  • nanoelectronics

Status

Published

Forskningsgrupp

  • Nano

ISBN/ISSN/Övrigt

  • ISSN: 0741-3106