Dynamics of extremely anisotropic etching of InP nanowires by HCl
Författare
Summary, in English
We report on the dynamics of in situ etching of nanowires using an etching agent which allows for parameter optimization for nanowire synthesis without concerns of tapering issues. Upon etching of InP nanowires using HCl it is found that HCl mainly reacts with the precursor TMI, its decomposition species, and physisorbed In. The reaction with solid InP is less rapid and diffusion limited. We find a gas-phase etch process which is metal assisted and has a high aspect ratio of 1:100. (C) 2011 Elsevier B.V. All rights reserved.
Publiceringsår
2011
Språk
Engelska
Sidor
222-224
Publikation/Tidskrift/Serie
Chemical Physics Letters
Volym
502
Issue
4-6
Dokumenttyp
Artikel i tidskrift
Förlag
Elsevier
Ämne
- Condensed Matter Physics
Status
Published
ISBN/ISSN/Övrigt
- ISSN: 0009-2614