Webbläsaren som du använder stöds inte av denna webbplats. Alla versioner av Internet Explorer stöds inte längre, av oss eller Microsoft (läs mer här: * https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Var god och använd en modern webbläsare för att ta del av denna webbplats, som t.ex. nyaste versioner av Edge, Chrome, Firefox eller Safari osv.

Growth of large area monolayer graphene on 3C-SiC and a comparison with other SiC polytypes

In English

Författare

  • G. Reza Yazdi
  • Remigijus Vasiliauskas
  • Tihomir Iakimov
  • Alexei Zakharov
  • Mikael Syvajarvi
  • Rositza Yakimova

Summary, in English

Epitaxial graphene growth was performed on the Si-terminated face of 4H-, 6H-, and 3C-SiC substrates by silicon sublimation from SiC in argon atmosphere at a temperature of 2000 degrees C. Graphene surface morphology, thickness and band structure have been assessed by using atomic force microscopy, low-energy electron microscopy, and angle-resolved photoemission spectroscopy, respectively. Differences in the morphology of the graphene layers on different SiC polytypes is related mainly to the minimization of the terrace surface energy during the step bunching process. The uniformity of silicon sublimation is a decisive factor for obtaining large area homogenous graphene. It is also shown that a lower substrate surface roughness results in more uniform step bunching with a lower distribution of step heights and consequently better quality of the grown graphene. Large homogeneous areas of graphene monolayers (over 50 x 50 mu m(2)) have been grown on 3C-SiC (1 1 1) substrates. The comparison with the other polytypes suggests a similarity in the surface behaviour of 3C- and 6H-SiC. (C) 2013 Elsevier Ltd. All rights reserved.

Publiceringsår

2013

Språk

Engelska

Sidor

477-484

Publikation/Tidskrift/Serie

Carbon

Volym

57

Dokumenttyp

Artikel i tidskrift

Förlag

Elsevier

Ämne

  • Natural Sciences
  • Physical Sciences

Status

Published

ISBN/ISSN/Övrigt

  • ISSN: 0008-6223