Webbläsaren som du använder stöds inte av denna webbplats. Alla versioner av Internet Explorer stöds inte längre, av oss eller Microsoft (läs mer här: * https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Var god och använd en modern webbläsare för att ta del av denna webbplats, som t.ex. nyaste versioner av Edge, Chrome, Firefox eller Safari osv.

A proposal to estimate homogeneous and inhomogeneous energy level broadening in double barrier resonant tunneling diodes

In English

Författare

Summary, in English

In this paper we proposed a method for evaluating a homogeneous broadening (DeltaE(h)) and inhomogeneous broadening (DeltaE(i)) of the resonant energy level width independently by using current-voltage characteristics in double barrier resonant tunneling diodes (DBRTDs). The line shape of the resonant energy broadening is assumed as a convolution of Lorentz function and a Gauss function. Measured transmittance in GaAs0.25P0.75/GaAs DBRTDs grown by MOCVD is well fit to the convolution function. The DeltaE(h), DeltaE(i) were estimated as 4.3[meV] and 1.0 [meV], respectively, where the measured energy-voltage conversion factor 17 is 0.3[eV/V].

Publiceringsår

2002

Språk

Engelska

Sidor

363-367

Publikation/Tidskrift/Serie

Compound Semiconductors 2001 (Institute of Physics Conference Series)

Issue

170

Dokumenttyp

Konferensbidrag

Förlag

IOP Publishing

Ämne

  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics

Conference name

ISCS 2001

Conference date

2001-10-01 - 2001-10-04

Conference place

Tokyo, Japan

Status

Published

ISBN/ISSN/Övrigt

  • ISSN: 0951-3248