Structural Characterisation of GaP <111 > B Nanowires by HRTEM

Summary, in English

GaP < 111 > B nanowires are dominated by (111) twins orthogonal to the growth direction and show well-developed {111} side-facets. Based on this, a 3D-model has been constructed with a cross-section of an octahedron used as a building block. The twins can be of ortho- or para type i.e. by 60 degrees about the growth axis or 180 degrees in the twin plane. The segment thickness variation follows an exponential distribution with a clear dependence oil growth ternperature. Multislice simulations show different features of the twin types that are useful for further characterisation.

• Författare: L. S. Karlsson; Jonas Johansson; C. P. T. Svensson; Thomas Mårtensson; Brent Wacaser; Jakob Malm; Knut Deppert; Werner Seifert; Lars Samuelson; L.R. Wallenberg
• Avdelning/ar: Fasta tillståndets fysik
• Publiceringsår: 2008
• Språk: Engelska
• Sidor: 229-232
• Publikation/Tidskrift/Serie: Microscopy of Semiconducting Material 2007
• Volym: 120
• Dokumenttyp: Konferensbidrag
• Förlag: Springer
• Ämne: Condensed Matter Physics
• Conference name: 15th Conference on Microscopy of Semiconducting Materials
• Conference date: 2007-04-02 - 2007-04-05
• Status: Published
• ISBN/ISSN/Övrigt: ISSN: 0930-8989; ISBN: 978-1-4020-8614-4