Unit Cell Structure of Crystal Polytypes in InAs and InSb Nanowires
Författare
Summary, in English
The atomic distances in hexagonal polytypes of III-V compound semiconductors differ from the values expected from simply a change of the stacking sequence of (111) lattice planes. While these changes were difficult to quantify so far, we accurately determine the lattice parameters of zinc blende, wurtzite, and 4H polytypes for InAs and InSb nanowires, using X-ray diffraction and transmission electron microscopy. The results are compared to density functional theory calculations. Experiment and theory show that the occurrence of hexagonal bilayers tend to strech the distances of atomic layers parallel to the c-axis and to reduce the in-plane distances compared to those in zinc blende. The change of the lattice parameters scales linearly with the hexagonality of the polytype, defined as the fraction of bilayers with hexagonal character within one unit cell.
Publiceringsår
2011
Språk
Engelska
Sidor
1483-1489
Publikation/Tidskrift/Serie
Nano Letters
Volym
11
Issue
4
Dokumenttyp
Artikel i tidskrift
Förlag
The American Chemical Society (ACS)
Ämne
- Nano Technology
Nyckelord
- Nanowires
- polytypes
- crystal structure
- X-ray diffraction
- density
- functional theory
Status
Published
ISBN/ISSN/Övrigt
- ISSN: 1530-6992