Photoreflectance study of the fundamental optical properties of (Ga,Mn) As epitaxial films
Författare
Summary, in English
Fundamental optical properties of thin films of the (Ga,Mn) As diluted ferromagnetic semiconductor with low (1%-2%) and high (4%-6%) Mn content and of a reference GaAs film, grown by low-temperature molecular-beam epitaxy, have been investigated by photoreflectance (PR) spectroscopy. In addition, the films were subjected to complementary characterization by means of superconducting quantum interference device magnetometry, Raman spectroscopy, and high-resolution x-ray diffractometry. Thorough full-line-shape analysis of the PR spectra, which enabled determination of the E-0 electronic transition in (Ga,Mn) As, revealed significant differences between the energy band structures in the vicinity of the Gamma point of the Brillouin zone in the investigated (Ga,Mn) As films. In view of the experimental results obtained, the evolution of the valence band structure in (Ga,Mn) As with increasing Mn content is discussed, pointing to a merging of the Mn-related impurity band with the host GaAs valence band for high Mn content.
Avdelning/ar
Publiceringsår
2011
Språk
Engelska
Publikation/Tidskrift/Serie
Physical Review B (Condensed Matter and Materials Physics)
Volym
83
Issue
24
Dokumenttyp
Artikel i tidskrift
Förlag
American Physical Society
Ämne
- Natural Sciences
- Physical Sciences
Status
Published
ISBN/ISSN/Övrigt
- ISSN: 1098-0121