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3-D Integrated Track-and-Hold Circuit Using InAs Nanowire MOSFETs and Capacitors

In English

Författare

Summary, in English

This letter presents a vertical integration scheme where track-and-hold circuits, consisting of a MOSFET in series with a metal-insulator-metal (MIM) capacitor, are successfully fabricated along vertical InAs nanowires. The nanowire MOSFET is used as a switch with varying switch resistance, Rsw, as the gate-source voltage, VGS, is varied. The track-and-hold circuit operation is verified by a sine wave that is properly evaluated by the circuit. In addition, calculations show that the three-dimensional integration reduces the track-and-hold area a factor of 2, as compared with planar MIM capacitor only. With further nanowire pitch reduction, about ten times area saving is projected.

Publiceringsår

2016-07-01

Språk

Engelska

Sidor

851-854

Publikation/Tidskrift/Serie

IEEE Electron Device Letters

Volym

37

Issue

7

Dokumenttyp

Artikel i tidskrift

Förlag

IEEE - Institute of Electrical and Electronics Engineers Inc.

Ämne

  • Electrical Engineering, Electronic Engineering, Information Engineering

Nyckelord

  • capacitor
  • InAs
  • mixed-signal application
  • MOSFET
  • Nanowire
  • track-and-hold circuit

Status

Published

ISBN/ISSN/Övrigt

  • ISSN: 0741-3106