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Assembling Ferromagnetic Single-electron Transistors with Atomic Force Microscopy

  • Faiz Rahman
Publiceringsår: 2008
Språk: Engelska
Sidor: 29-40
Publikation/Tidskrift/Serie: Nanostructures in electronics and photonics
Dokumenttyp: Del av eller Kapitel i bok
Förlag: Pan Stanford Publishing Pte. Ltd., Penthouse Level, Suntec Tower 3, 8 Temasek Boulevard, Singapore 038988


Ferromagnetic Single Electron Transistors (F-SETs) comprise ferromagnetic electrodes connected to a ferromagnetic- or non-magnetic central island via tunnel barriers. These devices are important for studies of spin-transport physics in confined structures. Here we describe the development of a novel type of AFM-assembled nano-scale F-SETs suitable for spin-transport investigations at temperatures above 4.2 K. The ingenious fabrication technique means that their electrical characteristics can be tuned in real-time during the fabrication sequence by re-positioning the central island with Ångström precision.



  • Physics and Astronomy


  • ISBN: 978-981-4241-10-6

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