Structural and magnetic properties of GaAs:(Mn,Ga)As granular layers
Författare
Summary, in English
Granular GaAs:(Mn,Ga)As films were prepared by annealing the Ga0.92Mn0.08As/GaAs layer grown by the MBE method at low temperature. The annealing was performed at 500 or 600 degrees C. It is commonly accepted that this processing should result in formation of cubic zinc blende or hexagonal MnAs inclusions depending on the temperature. We demonstrate that such a priory assumption is not justified. The kind of formed inclusions depends not only on the annealing temperature but also on the number of defects and Mn atoms in the substitutional and interstitial positions in as grown sample. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Avdelning/ar
Publiceringsår
2011
Språk
Engelska
Sidor
1609-1614
Publikation/Tidskrift/Serie
Physica Status Solidi. B: Basic Research
Volym
248
Issue
7
Dokumenttyp
Artikel i tidskrift
Förlag
John Wiley & Sons Inc.
Ämne
- Natural Sciences
- Physical Sciences
Nyckelord
- granular material
- room temperature ferromagnetism
- spintronics
Status
Published
ISBN/ISSN/Övrigt
- ISSN: 0370-1972